204
Strain-Engineered MOSFETs
40. N. Singh, A. Agarwal, L. K. Bera, R. Kumar, G. Q. Lo, B. Narayanan and D. L.
Kwong, High-Performance Fully Depleted Silicon Nanowire (Diameter ≤ 5 nm)
Gate-All-Around CMOS Devices, IEEE Electron Dev. Lett., 27, 383–386, 2006.
41. N. Singh, K. D. Buddharaju, S. K. Manhas, A. Agarwal, S. C. Rustagi, G. Q. Lo, N.
Balasubramanian, and D.-L. Kwong, Si, SiGe Nanowire Devices by Top–Down
Technology and Their Applications, IEEE Trans. Electron Dev., 55, 3107–3118, 2008.
42. G. J. Zhang, G. Zhang, J. H. Chua, R. E. Chee, E. H. Wong, A. Agarwal, and
K. D. Buddharaju, DNA Sensing by Silicon Nanowire: Charge Layer Distance
Dependence, Nano Lett., 8, 1066–1070, 2008.
43. C. Wei, Y.-Z. Xiong, X. Zhou, N. Singh, S. C. Rustagi, G. Q. Lo, and D.-L. Kwong,
Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs in the
Subthreshold Region, IEEE Electron Dev. Lett., 30, 668–671, 2009.
44. D. Jimenez, B. Iniguez, J. Sune, L. F. Marsal, J. Pallares, and J. Roig, Continuous
Analytical I-V Model for Surrounding-Gate MOSFETs, IEEE Electron Dev. Lett.,
25, 571–573, 2004.
45. M. V. Haartman and M. Ostling, Low-Frequency Noise in Advanced MOS Devices,
Springer-Verlag, Dordrecht, Netherlands, 2007.
46. N. Siabi-Shahrivar, W. Redman-White, P. Ashburn, and H. A. Kemhadjian,
Reduction of 1/f Noise in Polysilicon Emitter Bipolar Transistors, Solid-State
Electron., 38, 389–400, 1995.
47. T. G. M. Kleinpenning, Location of Low-Frequency Noise Sources in Submicrometer
Bipolar Transistors, IEEE Trans. Electron Dev., ED-39, 1501–1506, 1992.
48. M. V. Haartman, M. Sanden, G. Bosman, and M. Ostling, Random Telegraph
Signal Noise in SiGe Heterojunction Bipolar Transistors, J. Appl. Phys., 92, 4414–
4421, 2002.
49. K. Kandiah, M. O. Deighton, and F. B. Whiting, A Physical Model for Random
Telegraph Signal Currents in Semiconductor Devices, J. Appl. Phys., 66, 937–
948, 1989.
50. M. J. Deen, S. L. Rumyantsev, and M. Schroter, On the Origin of 1/f Noise in
Polysilicon Emitter Bipolar Transistors, J. Appl. Phys., 85, 1192–1195, 1999.
51. D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, B. Tillack, W. Winkler, and P.
Schley, BiCMOS Integration of SiGe: C Heterojunction Bipolar Transistors, Proc.
IEEE BCTM 2002, 162–166, 2002.
52. J. D. Cressler and G. Niu, Silicon Germanium Heterojunction Bipolar Transistors,
Artech House, Norwood, Massachusetts, USA, 2003.
Strain-Engineered MOSFETs
40. N. Singh, A. Agarwal, L. K. Bera, R. Kumar, G. Q. Lo, B. Narayanan and D. L.
Kwong, High-Performance Fully Depleted Silicon Nanowire (Diameter ≤ 5 nm)
Gate-All-Around CMOS Devices, IEEE Electron Dev. Lett., 27, 383–386, 2006.
41. N. Singh, K. D. Buddharaju, S. K. Manhas, A. Agarwal, S. C. Rustagi, G. Q. Lo, N.
Balasubramanian, and D.-L. Kwong, Si, SiGe Nanowire Devices by Top–Down
Technology and Their Applications, IEEE Trans. Electron Dev., 55, 3107–3118, 2008.
42. G. J. Zhang, G. Zhang, J. H. Chua, R. E. Chee, E. H. Wong, A. Agarwal, and
K. D. Buddharaju, DNA Sensing by Silicon Nanowire: Charge Layer Distance
Dependence, Nano Lett., 8, 1066–1070, 2008.
43. C. Wei, Y.-Z. Xiong, X. Zhou, N. Singh, S. C. Rustagi, G. Q. Lo, and D.-L. Kwong,
Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs in the
Subthreshold Region, IEEE Electron Dev. Lett., 30, 668–671, 2009.
44. D. Jimenez, B. Iniguez, J. Sune, L. F. Marsal, J. Pallares, and J. Roig, Continuous
Analytical I-V Model for Surrounding-Gate MOSFETs, IEEE Electron Dev. Lett.,
25, 571–573, 2004.
45. M. V. Haartman and M. Ostling, Low-Frequency Noise in Advanced MOS Devices,
Springer-Verlag, Dordrecht, Netherlands, 2007.
46. N. Siabi-Shahrivar, W. Redman-White, P. Ashburn, and H. A. Kemhadjian,
Reduction of 1/f Noise in Polysilicon Emitter Bipolar Transistors, Solid-State
Electron., 38, 389–400, 1995.
47. T. G. M. Kleinpenning, Location of Low-Frequency Noise Sources in Submicrometer
Bipolar Transistors, IEEE Trans. Electron Dev., ED-39, 1501–1506, 1992.
48. M. V. Haartman, M. Sanden, G. Bosman, and M. Ostling, Random Telegraph
Signal Noise in SiGe Heterojunction Bipolar Transistors, J. Appl. Phys., 92, 4414–
4421, 2002.
49. K. Kandiah, M. O. Deighton, and F. B. Whiting, A Physical Model for Random
Telegraph Signal Currents in Semiconductor Devices, J. Appl. Phys., 66, 937–
948, 1989.
50. M. J. Deen, S. L. Rumyantsev, and M. Schroter, On the Origin of 1/f Noise in
Polysilicon Emitter Bipolar Transistors, J. Appl. Phys., 85, 1192–1195, 1999.
51. D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, B. Tillack, W. Winkler, and P.
Schley, BiCMOS Integration of SiGe: C Heterojunction Bipolar Transistors, Proc.
IEEE BCTM 2002, 162–166, 2002.
52. J. D. Cressler and G. Niu, Silicon Germanium Heterojunction Bipolar Transistors,
Artech House, Norwood, Massachusetts, USA, 2003.