197
Noise in Strain-Engineered Devices
24
22
20
18
16
16.0
15.5
V be = 0.68 V
V be = 0.66 V
V be = 0.64 V
V be = 0.62 V
V be = 0.6 V
V be = 0.7 V
15.0
14.5
13.5
13.0
10.2
10.0
9.8
I
B (nA)
9.6
8.0
7.5
7.0
6.5
4.2
4.0
3.8
3.6
10.5
11.2
11.9
12.6
Time (sec)
13.3
14.0
14.0
FIGURE 6.42
RTS of the SiGe:C HBT at different values of V BE .
10 –8
10
–9
10
–9
10
–8
10
–7
10
–10
10
–11
A E = 0.42 × 0.84 µm
2
∆I B /I B ~ 1.31%
∆I B ~ I B
I B (A)
∆I
B (A)
10
–12
10
–13
FIGURE 6.43
RTS amplitude scaling of SiGe:C HBT with the total base current I B .