195
Noise in Strain-Engineered Devices
well as in polyemitter BJTs. The 1/f noise amplitude K F is given in the SPICE
model as
S
K
I
f
K
K
A m
,
(
)
IB
F
B
B
F
E
2
2
=
=
×
µ
(6.65)
where K B is the figure of merit calculated as 1 × 10 –6 µm 2 .
10
–24
10
–25
10
–26
S
IB (A
2
/Hz)
I B = 0.6 µA
I B = 0.21 µA
I B = 0.38 µA
I B = 0.6 µA
10
–27
Frequency (Hz)
10
2
10
3
GR
FN
SN
1/f
10
4
FIGURE 6.39
Base current noise power spectral density S IB of the SiGe:C HBT with emitter area 0.42 × 0.84
µm 2 showing the low-frequency noise components, such as 1/f, generation–recombination
noise, and shot noise components at higher values of I B .
10
–23
10
–24
100 Hz
500 Hz
1000 Hz
S
IB (A
2
/Hz)
10
–25
10
–26
10
–9
10
–8
I B (A)
~ I B
2
10
–7
FIGURE 6.40
I B
2 dependence of the base current noise power spectral density S IB as a function of I B for the
SiGe:C HBT with emitter area 0.42 × 0.84 µm 2 at three different frequencies.
Noise in Strain-Engineered Devices
well as in polyemitter BJTs. The 1/f noise amplitude K F is given in the SPICE
model as
S
K
I
f
K
K
A m
,
(
)
IB
F
B
B
F
E
2
2
=
=
×
µ
(6.65)
where K B is the figure of merit calculated as 1 × 10 –6 µm 2 .
10
–24
10
–25
10
–26
S
IB (A
2
/Hz)
I B = 0.6 µA
I B = 0.21 µA
I B = 0.38 µA
I B = 0.6 µA
10
–27
Frequency (Hz)
10
2
10
3
GR
FN
SN
1/f
10
4
FIGURE 6.39
Base current noise power spectral density S IB of the SiGe:C HBT with emitter area 0.42 × 0.84
µm 2 showing the low-frequency noise components, such as 1/f, generation–recombination
noise, and shot noise components at higher values of I B .
10
–23
10
–24
100 Hz
500 Hz
1000 Hz
S
IB (A
2
/Hz)
10
–25
10
–26
10
–9
10
–8
I B (A)
~ I B
2
10
–7
FIGURE 6.40
I B
2 dependence of the base current noise power spectral density S IB as a function of I B for the
SiGe:C HBT with emitter area 0.42 × 0.84 µm 2 at three different frequencies.