184
Strain-Engineered MOSFETs
voltage of –3 V, which reveals the noise to be 1/f in nature and then becoming 1/f 3 type.
The gate voltage dependency of the drain voltage noise power spectral
density is shown in the Figure 6.29 as a function of gate voltage at two different frequencies, which shows a constant increase in the noise level with
10
2
10
3
Frequency (Hz)
10
4
10
5
10
0
Measurement
TCAD simulation
Tri-gate FinFET
W = 60 nm, H = 30 nm and L = 160 nm
V gs = –0.3 V
V ds = –0.05 V
10
–2
10
–4
f
–1
f
–3
10
–6
10
–8
S
VD (V
2
/Hz)
10
–10
10
–12
FIGURE 6.28
Simulated drain voltage 1/f γ noise spectra fitted with the measured spectra at a gate bias of –0.3
V, and drain voltage of –0.05 V for the tri-gate FinFET device.
0.00
10 –11
10
–10
10
–9
S
VD (V
2
/Hz)
10
–8
10
–7
10
–6
0.05
V ds = –0.05 V
L = 160 nm
H = 30 nm,
W = 60 nm,
Tri-gate FinFET
570 Hz
3.24 kHz
0.10
|V gs | (V)
0.15
0.20
FIGURE 6.29
The gate voltage dependency of the drain voltage noise power spectral density at two different
frequencies.