183
Noise in Strain-Engineered Devices
ATLAS framework is shown in Figure 6.26(a). The band diagram is shown
in Figure 6.26(b) with the insets showing hole concentraion and total doping
along the channel.
Figure 6.27 shows the measured 1/f γ drain voltage noise spectra of the trigate device as a function of frequency at different gate voltages. Figure 6.28
shows the fit of simulated drain voltage noise spectral density, obtained from
TCAD device simulation in SILVACO, with the experimental data at a gate
3.0
2.4
1.8
1.2
0.6
Energy (eV)
0.0
–0.6
–1.2
–1.8
0.04 0.06 0.08
Distance (in µm)
0.10 0.12
8.7537
Hole Cone (/cm3)
Materials:
Conductor
Aluminum
Polysilicon
SiO~2
Silicon
6.5653
4.3769
2.1884
0
21
Total Doping
(/cm3)
15.75
10.5
5.2501
0
0.14
Conduction band
Valence band
0.16
FIGURE 6.26
(a) Simulated device structure of the tri-gate FinFET. (b) The energy and diagram of the tri-gate
FinFET with the inset showing the hole concentration and total doping along the channel.
Frequency (Hz)
S
VD (V
2
/Hz)
10
0
10
–1
10
–2
10
–3
10
–4
10
–5
10
–6
10
–7
10
–8
10
–9
10
–10
10
–11
10
–12
V gs = –0.1 V
V gs = –0.2 V
V gs = –0.3 V
10
2
10
3
10
4
1/f
3
1/f
10 5
FIGURE 6.27
Measured 1/f γ drain voltage noise spectra of the tri-gate device as a function of frequency at
different gate voltages and a drain bias of –0.05 V.