xviii
List of Symbols
I off : Off-state current
I D , I DS , I d : Drain current of MOSFET
I G : Gate tunneling current
V DS ,V d : Drain/source voltage of MOSFET
V GS : Gate/source voltage of MOSFET
R C : Backscattering coefficient
σ : Stress
σ σ : Stress tensor
F : Force
A : Area
σ 11 , σ 22 , σ 33 : Normal stresses
σ 12 , σ 23 , σ 13 : Shear stresses
ε : Strain
/
ε ε : Strain tensor
S: Elasticity tensor
S 11 , S 12 , S 44 : Parallel, perpendicular, and sheer components of elastic modulus
m* : Conductivity effective mass
H : Hamiltonian
Ψ : Wave function
Ξ, ξ : Deformation potential
||
π π : Longitudinal piezoresistance coefficient
π π ⊥ ⊥ : Transverse piezoresistance coefficient
τ (ε) : Strain relaxation time
,
0
n
µ µ
0
P
µ µ : Electron and hole mobility without the strain
m nl , m nt : Electron longitudinal and transfer masses in the subvalley
m Pl , m P,h : Hole light and heavy effective masses
F n , Fp : Quasi-Fermi levels of electron and holes
( )
r
k
ψ ψ
, ( , )
r
k
ψ ψ
ε ε : Eigenfunctions for the unstrained and strained conditions
S I (f ), S V (f ) : Current and voltage noise power spectral density
ΔN : Fluctuation in the number of carriers
τ c , τ e : Mean capture and emission time constants
ΔI : RTS pulse amplitude
α H : Hooge’s parameter
N t , N T (E F ) : Trap density
γ : Frequency exponent of noise
S ID /I D
2 : Normalised drain current noise
λ : Tunneling attenuation length
Z t : Position of the trap measured from the Si/SiO 2 interface
v TH : Thermal velocity of electrons
σ n : Electron capture cross section of the traps
E T : Trap energy level
ΔN t,eff /N t,eff : Effective change in trap density due to stress
ΔΦ B (σ) : Ground energy-level shifts in the inversion layer for applied different types of stresses
f t (σ) : Stress-dependent trap occupation function
List of Symbols
I off : Off-state current
I D , I DS , I d : Drain current of MOSFET
I G : Gate tunneling current
V DS ,V d : Drain/source voltage of MOSFET
V GS : Gate/source voltage of MOSFET
R C : Backscattering coefficient
σ : Stress
σ σ : Stress tensor
F : Force
A : Area
σ 11 , σ 22 , σ 33 : Normal stresses
σ 12 , σ 23 , σ 13 : Shear stresses
ε : Strain
/
ε ε : Strain tensor
S: Elasticity tensor
S 11 , S 12 , S 44 : Parallel, perpendicular, and sheer components of elastic modulus
m* : Conductivity effective mass
H : Hamiltonian
Ψ : Wave function
Ξ, ξ : Deformation potential
||
π π : Longitudinal piezoresistance coefficient
π π ⊥ ⊥ : Transverse piezoresistance coefficient
τ (ε) : Strain relaxation time
,
0
n
µ µ
0
P
µ µ : Electron and hole mobility without the strain
m nl , m nt : Electron longitudinal and transfer masses in the subvalley
m Pl , m P,h : Hole light and heavy effective masses
F n , Fp : Quasi-Fermi levels of electron and holes
( )
r
k
ψ ψ
, ( , )
r
k
ψ ψ
ε ε : Eigenfunctions for the unstrained and strained conditions
S I (f ), S V (f ) : Current and voltage noise power spectral density
ΔN : Fluctuation in the number of carriers
τ c , τ e : Mean capture and emission time constants
ΔI : RTS pulse amplitude
α H : Hooge’s parameter
N t , N T (E F ) : Trap density
γ : Frequency exponent of noise
S ID /I D
2 : Normalised drain current noise
λ : Tunneling attenuation length
Z t : Position of the trap measured from the Si/SiO 2 interface
v TH : Thermal velocity of electrons
σ n : Electron capture cross section of the traps
E T : Trap energy level
ΔN t,eff /N t,eff : Effective change in trap density due to stress
ΔΦ B (σ) : Ground energy-level shifts in the inversion layer for applied different types of stresses
f t (σ) : Stress-dependent trap occupation function