xix
List of Symbols
S VG (f ) : Gate voltage noise power spectral density
D it : Interface state density
λ sc : Scattering parameter in correlated mobility fluctuation model
S IB : Base current noise power spectral density
I B : Base current
V BE : Base-emitter bias voltage
V CE : Collector-emitter bias voltage
A E : Emitter area
L S : Screening length
ΔI B : RTS amplitude in base current
h 21 : Current gain
S 11 , s 22 , s 12 , s 21 : S-parameters
f T : Cutoff frequency
E tao : DIBL coefficient
N ch : Channel doping concentration
T SiN : Nitride cap layer thickness