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List of Symbols
E: Energy
E g : Band gap of semiconductor
E C : Conduction band energy
E V : Valence band energy
ΔE C , ΔE V : Strain-induced change in the energy of carrier subvalleys
N C , N V : Effective densities of states
n i : Intrinsic carrier concentration
T Si : Silicon channel thickness
t ox , T ox : Oxide thickness
k, k B : Boltzmann constant
k x , k y , k z : Wave vectors
W : Width of the transistor
H fin : Fin height
W fin : Fin width
L, Lg : Channel or gate length
V FB : Flat-band voltage
V T , V TH , V t , V th : Threshold voltage
C ox : Gate oxide capacitance
C d : Depletion capacitance
Q ox : Oxide charge density
ΦB : Energy difference of the Fermi level in the bulk region
V bi : Built-in potential across the source/drain channel
Φ : Potential
Φ 0 : Difference between the electron affinities of Si and SiO 2
ψ s : Surface potential
μ : Mobility
μ eff : Effective mobility
X d : Channel depletion layer length
X j : Source/drain junction depth
Q is , Q s , Q i , N inv : Inversion charge density
v : Injection velocity near source region
T : Temperature
C L : Load capacitance
S : Subthreshold slope
f : Frequency
g m /I d : Transconductance-to-drain current ratio
g m : Transconductance
Vdd, V DD : Power supply voltage
R ds : Drain/source resistance
I on : On-state current