xiv
List of Abbreviations
HFET: Heterostructure field-effect transistor
HH: Heavy hole
HK-MG: High-k/metal gate
HOT: Hybrid orientation technology
HP: High performance
IC: Integrated circuit
ITRS: International Technology Roadmap for Semiconductors
KOZ: Keep-out zone
LF: Low frequency
LH: Light hole
LNA: Low-noise amplifier
LOP: Low operating power
LRP: Limited reaction processing
LRPCVD: Limited reaction processing chemical vapour deposition
LSF: Least-squares fit
LSTP: Low standby power
MBE: Molecular beam epitaxy
MG: Metal gate
MOS: Metal-oxide-semiconductor
MOSFET: Metal-oxide-semiconductor field-effect transistor
MUGFET: Multigate MOSFET
NBTI: Negative bias temperature instability
NW: Nanowire
OMVPE: Organometallic vapour phase epitaxy
PB: Planar bulk
PBTI: Positive bias temperature instability
PCM: Process compact model
PDK: Predictive process design kit
PR: Piezoresistance
PSD: Power spectral density
PSS: Process-induced strain
PTM: Predictive technology model
QW: Quantum well
R-D: Reaction-diffusion
RBL: Relaxed buffer layer
RIE: Reactive ion etching
RPCVD: Reduced-pressure chemical vapour deposition
RTA: Rapid thermal annealing
RTCVD: Rapid thermal chemical vapour deposition
RTN: Random telegraph noise
RTS: Random telegraph signal
S/D: Source/drain
SCE: Short-channel effect
SEG: Selectively epitaxial growth
SEM: Scanning electron microscope