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List of Abbreviations
BEOL: Back end of line
BOX: Buried oxide
BPTM: Berkeley Predictive Technology Model
BTBT: Band-to-band tunneling
BTI: Bias temperature instability
CD: Critical dimension
CESL: Contact etch stop layer
CMOS: Complementary metal-oxide-semiconductor
CMP: Chemical mechanical polishing
CVD: Chemical vapour deposition
DFM: Design for manufacturability
DFT: Density functional theory
DFY: Design for yield
DG MOSFET: Double-gate MOSFET
DIBL: Drain-induced barrier lowering
DoE: Design of experiments
DQW: Double quantum well
DRIE: Deep reactive ion etching
DSL: Dual-stress liner
e-SiGe: Embedded SiGe
EDA: Electronic design automation
EOT: Equivalent oxide thickness
EPM: Empirical pseudopotential method
EUV: Extreme ultraviolet radiation
FCC: Face-centred cubic
FEA: Finite element analysis
FEOL: Front end of line
FET: Field-effect transistor
FN: Fowler–Nordheim
FUSI: Fully silicided
GAA: Gate-all-around
GAA MOSFET: Gate-all-around MOSFET
GeOI: Germanium-on-insulator
GIDL: Gate-induced drain leakage
GR: Generation recombination
GSI: Giga-scale integration
GSMBE: Gas source molecular beam epitaxy
HBT: Heterojunction bipolar transistor
HCI: Hot-carrier injection
HDD: Highly doped drain
List of Abbreviations
BEOL: Back end of line
BOX: Buried oxide
BPTM: Berkeley Predictive Technology Model
BTBT: Band-to-band tunneling
BTI: Bias temperature instability
CD: Critical dimension
CESL: Contact etch stop layer
CMOS: Complementary metal-oxide-semiconductor
CMP: Chemical mechanical polishing
CVD: Chemical vapour deposition
DFM: Design for manufacturability
DFT: Density functional theory
DFY: Design for yield
DG MOSFET: Double-gate MOSFET
DIBL: Drain-induced barrier lowering
DoE: Design of experiments
DQW: Double quantum well
DRIE: Deep reactive ion etching
DSL: Dual-stress liner
e-SiGe: Embedded SiGe
EDA: Electronic design automation
EOT: Equivalent oxide thickness
EPM: Empirical pseudopotential method
EUV: Extreme ultraviolet radiation
FCC: Face-centred cubic
FEA: Finite element analysis
FEOL: Front end of line
FET: Field-effect transistor
FN: Fowler–Nordheim
FUSI: Fully silicided
GAA: Gate-all-around
GAA MOSFET: Gate-all-around MOSFET
GeOI: Germanium-on-insulator
GIDL: Gate-induced drain leakage
GR: Generation recombination
GSI: Giga-scale integration
GSMBE: Gas source molecular beam epitaxy
HBT: Heterojunction bipolar transistor
HCI: Hot-carrier injection
HDD: Highly doped drain
