137
Strain-Engineered MOSFETs
700
600
500
400
300
Hole Mobility/cm
2
/Vsec
200
100
0
0
1
Uniaxial Compressive Stress/GPa
2
Bulk (110) FET
Bulk (001) FET
FinFET
P inv = 1×10
13 /cm
2
3
FIGURE 5.17
Hole mobility of FinFETs under uniaxial stress compared with bulk (110)-oriented devices
at a charge density of 1 × 10 13 /cm 2 . (After Sun, G., Strain Effects on Hole Mobility of Silicon
and Germanium p-Type Metal-Oxide-Semiconductor Field-Effect-Transistors, PhD thesis,
University of Florida, 2007.)
0.0
0.00
0.24
0.20
0.16
0.12
0.04
0.08
Without stress, V gs = 1 V
Without stress, V gs = 2 V
With stress, V gs = 1 V
With stress, V gs = 2 V
Fin Height = 50 nm
Fin Width = 50 nm
Fin Length = 1 µm
Gate length = 50 nm, Width = 50 nm
0.5
1.0
1.5
Gate Voltage (V)
Drain Current (mA)
2.0
2.5
3.0
FIGURE 5.16
I d -V d characteristics of stress-engineered FinFET devices. Current enhancement due to stress
is shown.
Strain-Engineered MOSFETs
700
600
500
400
300
Hole Mobility/cm
2
/Vsec
200
100
0
0
1
Uniaxial Compressive Stress/GPa
2
Bulk (110) FET
Bulk (001) FET
FinFET
P inv = 1×10
13 /cm
2
3
FIGURE 5.17
Hole mobility of FinFETs under uniaxial stress compared with bulk (110)-oriented devices
at a charge density of 1 × 10 13 /cm 2 . (After Sun, G., Strain Effects on Hole Mobility of Silicon
and Germanium p-Type Metal-Oxide-Semiconductor Field-Effect-Transistors, PhD thesis,
University of Florida, 2007.)
0.0
0.00
0.24
0.20
0.16
0.12
0.04
0.08
Without stress, V gs = 1 V
Without stress, V gs = 2 V
With stress, V gs = 1 V
With stress, V gs = 2 V
Fin Height = 50 nm
Fin Width = 50 nm
Fin Length = 1 µm
Gate length = 50 nm, Width = 50 nm
0.5
1.0
1.5
Gate Voltage (V)
Drain Current (mA)
2.0
2.5
3.0
FIGURE 5.16
I d -V d characteristics of stress-engineered FinFET devices. Current enhancement due to stress
is shown.