136
Strain-Engineered MOSFETs
(a)
(b)
Nitride cap
Gate poly
Channel
(a)
1.27
1.03
0.794
0.558
0.321
0.0842
–0.152
–0.389
–0.626
0.682
0.507
0.331
0.156
–0.0194
–0.195
–0.37
–0.546
–0.721
0.29
0.177
0.064
–0.0488
–0.162
–0.275
–0.387
–0.5
–0.613
n-Mobility Entrancement. XX
n-Mobility Entrancement. YY
n-Mobility Entrancement. ZZ
(b)
(c)
(c)
FIGURE 5.14
Three-dimensional mobility enhancement factors along the channel direction.
0.0
10
–11
10
–10
10
–9
10
–8
10
–7
10
–6
10
–5
10
–4
10
–3
10
–2
10
–1
10
–0
Without stress
V ds = 0.1 V
With stress
Fin Height = 50 nm
Fin Width = 50 nm
Fin Length = 1 µm
Gate length = 50 nm, Width = 50 nm
60
50
40
30
20
10
0
0.5
1.0
1.5
Gate Voltage (V)
Drain Current (A)
Drain Current (µA)
2.0
2.5
3.0
FIGURE 5.15
I d -V g characteristics of stress-engineered FinFET devices.