112
Strain-Engineered MOSFETs
9. What is a scattering matrix?
10. What is the role of electron–phonon interaction on mobility?
11. How does splitting of energy subbands affect electron mobility?
References
1. J. Bardeen and W. Shockley, Deformation Potentials and Mobilities in Non-Polar
Crystals, Phys. Rev., 80, 72–80, 1950.
2. C. S. Smith, Piezoresistance Effect in Germanium and Silicon, Phys. Rev., 94,
42–49, 1954.
3. V. M. Agostinelli, H. Shin, and A. F. Tasch, A Comprehensive Model for Inversion
Layer Hole Mobility for Simulation of Submicrometer MOSFETs, IEEE Trans.
Electron Dev., 38, 151–159, 1991.
4. M. Shirahata, H. Kusano, N. Kotani, S. Kusanoki, and Y. Akasaka, A Mobility
Model Including the Screening Effect in MOS Inversion Layer, IEEE Trans.
Computer-Aided Design, 11, 1114–1119, 1992.
5. M. N. Darwish, J. L. Lentz, M. R. Pinto, P. M. Zeitzoff, T. J. Krutsick, and H. H.
Vuong, An Improved Electron and Hole Mobility Model for General Purpose
Device Simulation, IEEE Trans. Electron Dev., 44, 1529–1538, 1997.
6. M. Kondo and H. Tanimoto, An Accurate Coulomb Mobility Model for MOS
Inversion Layer and Its Application to NO Oxynitride Devices, IEEE Trans.
Electron Dev., 48, 265–270, 2001.
7. S. Reggiani, A. Valdinoci, L. Colalongo, M. Rudan, G. Baccarani, A. Stricker,
F. Illien, N. Felber, W. Fichtner, S. Mettler, S. Lindenkreuz, and L. Zullino,
Surface Mobility in Silicon at Large Operating Temperature, Proc. Simulation
Semiconductor Processes Devices (SISPAD), 15–20, 2002.
8. Synopsys, Inc., Sentaurus Device User Manual, version A-2007.12, Mountain
View, CA, March 2008.
9. T. K. Maiti, S. S. Mahato, P. Chakraborty, S. K. Sarkar, and C. K. Maiti, CMOS
Performance Enhancement in Hybrid Orientation Technologies, J. Comput.
Electron, 7, 181–186, 2008.
10. J. F. Nye, Physical Properties of Crystals, Clarendon Press, Oxford, 1985.
11. Synopsys, Inc., Sentaurus Process User Manual, version A-2007.12, Mountain
View, CA, March 2008.
12. H. E. Randell, Application of Stress from Boron Doping and Other Challenges in
Silicon Technology, PhD thesis, University of Florida, 2005.
13. M. S. Lundstrom, Fundamentals of Carrier Transport, Cambridge University Press,
Cambridge, 2000.
14. M. S. Lundstrom and Z. Ren, Essential Physics of Carrier Transport in Nanoscale
MOSFETs, IEEE Trans. Electron Dev., 49, 131–141, 2002.
15. ST Microelectronics, MASTAR User Guide, 2003.
16. M. V. Fischetti and Z. Ren, Six-Band k.p Calculation of the Hole Mobility in
Silicon Inversion Layers: Dependence on Surface Orientation, Strain, and
Silicon Thickness, J. Appl. Phys., 94, 1079–1095, 2003.
Strain-Engineered MOSFETs
9. What is a scattering matrix?
10. What is the role of electron–phonon interaction on mobility?
11. How does splitting of energy subbands affect electron mobility?
References
1. J. Bardeen and W. Shockley, Deformation Potentials and Mobilities in Non-Polar
Crystals, Phys. Rev., 80, 72–80, 1950.
2. C. S. Smith, Piezoresistance Effect in Germanium and Silicon, Phys. Rev., 94,
42–49, 1954.
3. V. M. Agostinelli, H. Shin, and A. F. Tasch, A Comprehensive Model for Inversion
Layer Hole Mobility for Simulation of Submicrometer MOSFETs, IEEE Trans.
Electron Dev., 38, 151–159, 1991.
4. M. Shirahata, H. Kusano, N. Kotani, S. Kusanoki, and Y. Akasaka, A Mobility
Model Including the Screening Effect in MOS Inversion Layer, IEEE Trans.
Computer-Aided Design, 11, 1114–1119, 1992.
5. M. N. Darwish, J. L. Lentz, M. R. Pinto, P. M. Zeitzoff, T. J. Krutsick, and H. H.
Vuong, An Improved Electron and Hole Mobility Model for General Purpose
Device Simulation, IEEE Trans. Electron Dev., 44, 1529–1538, 1997.
6. M. Kondo and H. Tanimoto, An Accurate Coulomb Mobility Model for MOS
Inversion Layer and Its Application to NO Oxynitride Devices, IEEE Trans.
Electron Dev., 48, 265–270, 2001.
7. S. Reggiani, A. Valdinoci, L. Colalongo, M. Rudan, G. Baccarani, A. Stricker,
F. Illien, N. Felber, W. Fichtner, S. Mettler, S. Lindenkreuz, and L. Zullino,
Surface Mobility in Silicon at Large Operating Temperature, Proc. Simulation
Semiconductor Processes Devices (SISPAD), 15–20, 2002.
8. Synopsys, Inc., Sentaurus Device User Manual, version A-2007.12, Mountain
View, CA, March 2008.
9. T. K. Maiti, S. S. Mahato, P. Chakraborty, S. K. Sarkar, and C. K. Maiti, CMOS
Performance Enhancement in Hybrid Orientation Technologies, J. Comput.
Electron, 7, 181–186, 2008.
10. J. F. Nye, Physical Properties of Crystals, Clarendon Press, Oxford, 1985.
11. Synopsys, Inc., Sentaurus Process User Manual, version A-2007.12, Mountain
View, CA, March 2008.
12. H. E. Randell, Application of Stress from Boron Doping and Other Challenges in
Silicon Technology, PhD thesis, University of Florida, 2005.
13. M. S. Lundstrom, Fundamentals of Carrier Transport, Cambridge University Press,
Cambridge, 2000.
14. M. S. Lundstrom and Z. Ren, Essential Physics of Carrier Transport in Nanoscale
MOSFETs, IEEE Trans. Electron Dev., 49, 131–141, 2002.
15. ST Microelectronics, MASTAR User Guide, 2003.
16. M. V. Fischetti and Z. Ren, Six-Band k.p Calculation of the Hole Mobility in
Silicon Inversion Layers: Dependence on Surface Orientation, Strain, and
Silicon Thickness, J. Appl. Phys., 94, 1079–1095, 2003.