113
Electronic Properties of Strain-Engineered Semiconductors
17. J. R. Chelikowsky and M. L. Cohen, Nonlocal Pseudopotential Calculations for
the Electronic Structure of Eleven Diamond and Zincblende Semiconductors,
Phys. Rev. B, 14, 556–582, 976.
18. C. G. Van de Walle and R. M. Martin, Theoretical Calculations of Heterojunction
Discontinuities in the Si/Ge System, Phys. Rev. B, 34, 5621–5634, 1986.
19. M. M. Rieger and P. Vogl, Electronic-Band Parameters in Strained Si Ge Alloys
on Si Ge Substrates, Phys. Rev. B, 48, 14276–14287, 1993.
20. M. V. Fischetti and S. E. Laux, Band Structure, Deformation Potentials, and Carrier
Mobility in Strained Si, Ge, and SiGe Alloys, J. Appl. Phys., 80, 2234–2252, 1996.
21. G. L. Bir and G. E. Pikus, Symmetry and Strain Induced Effects in Semiconductors,
Wiley, New York, 1974.
22. J. M. Luttinger and W. Kohn, Motion of Electrons and Holes in Perturbed
Periodic Fields, Phys. Rev., 97, 869–883, 1955.
23. J. M. Luttinger, Quantum Theory of Cyclotron Resonance in Semiconductors:
General Theory, Phys. Rev., 102, 1030–1041, 1956.
24. S. E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman,
J. Klaus, Z. Ma, M. Bohr, and Y. El-Mansy, A 90-nm Logic Technology Featuring
Strained-Silicon, IEEE Trans. Electron Dev., 51, 1790–1797, 2004.
25. T. Skotnicki, J. A. Hutchby, T.-J. King, H. S. P. Wong, and F. Boeuf, The End
of CMOS Scaling: Toward the Introduction of New Materials and Structural
Changes to Improve MOSFET Performance, IEEE Circuits Devices Mag., 21,
16–26, 2005.
26. E. Kasper and D. J. Paul, Silicon Quantum Integrated Circuit, Springer-Verlag,
Berlin, 2005.
27. Y. Sun, S. E. Thompson, and T. Nishida, Physics of Strain Effects in
Semiconductors and Metal-Oxide-Semiconductor Field-Effect Transistors, J.
Appl. Phys., 101, 104503-1–104503-22, 2007.
28. P. Roblin and H. Rohdin, High-Speed Heterostructure Devices, Cambridge
University Press, Cambridge, 2002.
29. K. Matsuda, K. Suzuki, K. Yamamura, and Y. Kanda, Nonlinear Piezoresistance
Effects in Silicon, J. Appl. Phys., 73, 1838–1847, 1993.
30. Y. Kanda, A Graphical Representation of the Piezoresistance Coefficients in
Silicon, IEEE Trans. Electron Dev., ED-29, 64–70, 1982.
31. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer, Wien, 1984.
32. S. Wolfram, Mathematica: A System for Doing Mathematics by Computer, 2nd ed.,
Addison-Wesley Publishing Company, Redwood City, CA, 1991.
33. J. L. Egley and D. Chidambarrao, Strain Effects on Device Characteristics:
Implementation in Drift-Diffusion Simulators, Solid-State Electron., 36, 1653–
1664, 1993.
34. C. Kittel, Quantum Theory of Solid, John Wiley & Sons, New York, USA, 1987.
35. B. R. Nag, Physics of Quantum Well Devices, Kluwer Academic Publishers, Boston,
USA, 2000.
36. V. Kolomoets, V. Baidakov, A. Fedosov, A. Gorin, V. Ermakov, E. Liarokapis,
G. Gromova, B. Kazbekova, L. Taimuratova, and B. Orasgulyev, Application of
Piezoresistance Effect in Highly Uniaxially Strained p-Si and n-Si for CurrentCarrier Mobility Increase, Phys. Stat. Sol. B, 246, 652–654. 2009.
Electronic Properties of Strain-Engineered Semiconductors
17. J. R. Chelikowsky and M. L. Cohen, Nonlocal Pseudopotential Calculations for
the Electronic Structure of Eleven Diamond and Zincblende Semiconductors,
Phys. Rev. B, 14, 556–582, 976.
18. C. G. Van de Walle and R. M. Martin, Theoretical Calculations of Heterojunction
Discontinuities in the Si/Ge System, Phys. Rev. B, 34, 5621–5634, 1986.
19. M. M. Rieger and P. Vogl, Electronic-Band Parameters in Strained Si Ge Alloys
on Si Ge Substrates, Phys. Rev. B, 48, 14276–14287, 1993.
20. M. V. Fischetti and S. E. Laux, Band Structure, Deformation Potentials, and Carrier
Mobility in Strained Si, Ge, and SiGe Alloys, J. Appl. Phys., 80, 2234–2252, 1996.
21. G. L. Bir and G. E. Pikus, Symmetry and Strain Induced Effects in Semiconductors,
Wiley, New York, 1974.
22. J. M. Luttinger and W. Kohn, Motion of Electrons and Holes in Perturbed
Periodic Fields, Phys. Rev., 97, 869–883, 1955.
23. J. M. Luttinger, Quantum Theory of Cyclotron Resonance in Semiconductors:
General Theory, Phys. Rev., 102, 1030–1041, 1956.
24. S. E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman,
J. Klaus, Z. Ma, M. Bohr, and Y. El-Mansy, A 90-nm Logic Technology Featuring
Strained-Silicon, IEEE Trans. Electron Dev., 51, 1790–1797, 2004.
25. T. Skotnicki, J. A. Hutchby, T.-J. King, H. S. P. Wong, and F. Boeuf, The End
of CMOS Scaling: Toward the Introduction of New Materials and Structural
Changes to Improve MOSFET Performance, IEEE Circuits Devices Mag., 21,
16–26, 2005.
26. E. Kasper and D. J. Paul, Silicon Quantum Integrated Circuit, Springer-Verlag,
Berlin, 2005.
27. Y. Sun, S. E. Thompson, and T. Nishida, Physics of Strain Effects in
Semiconductors and Metal-Oxide-Semiconductor Field-Effect Transistors, J.
Appl. Phys., 101, 104503-1–104503-22, 2007.
28. P. Roblin and H. Rohdin, High-Speed Heterostructure Devices, Cambridge
University Press, Cambridge, 2002.
29. K. Matsuda, K. Suzuki, K. Yamamura, and Y. Kanda, Nonlinear Piezoresistance
Effects in Silicon, J. Appl. Phys., 73, 1838–1847, 1993.
30. Y. Kanda, A Graphical Representation of the Piezoresistance Coefficients in
Silicon, IEEE Trans. Electron Dev., ED-29, 64–70, 1982.
31. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer, Wien, 1984.
32. S. Wolfram, Mathematica: A System for Doing Mathematics by Computer, 2nd ed.,
Addison-Wesley Publishing Company, Redwood City, CA, 1991.
33. J. L. Egley and D. Chidambarrao, Strain Effects on Device Characteristics:
Implementation in Drift-Diffusion Simulators, Solid-State Electron., 36, 1653–
1664, 1993.
34. C. Kittel, Quantum Theory of Solid, John Wiley & Sons, New York, USA, 1987.
35. B. R. Nag, Physics of Quantum Well Devices, Kluwer Academic Publishers, Boston,
USA, 2000.
36. V. Kolomoets, V. Baidakov, A. Fedosov, A. Gorin, V. Ermakov, E. Liarokapis,
G. Gromova, B. Kazbekova, L. Taimuratova, and B. Orasgulyev, Application of
Piezoresistance Effect in Highly Uniaxially Strained p-Si and n-Si for CurrentCarrier Mobility Increase, Phys. Stat. Sol. B, 246, 652–654. 2009.