108
5 Modification of Band Alignment via Work Function Control
(a)
(b)
(c)
Fig. 5.14 a SBH plotted against metal work function at interface between n-type Ge(111) and
metals [8]. b SBH plotted against metal work function at interface between n-type Ge(001) and
metals [8]. c SBH plotted against metal work function at interface between n-type Ge and metals
with the insertion of a few monolayers of amorphous Ge 3 N 4 [8]
are preferable for low energy consumption. In this example, the dopant in the semiconductor segregates during annealing, which also causes the interfacial reaction
between the source (Ni) and semiconductor (Si), forming nickel silicide (NiSi).
This segregation layer (normally less than a couple of monolayers in thickness)
reduces the SBH between Si and NiSi (Fig. 5.18b [10]). The advantage of utilizing
interface segregation for interface layer insertion is that the segregation layer is
thermodynamically stable and does not change upon further annealing.
5 Modification of Band Alignment via Work Function Control
(a)
(b)
(c)
Fig. 5.14 a SBH plotted against metal work function at interface between n-type Ge(111) and
metals [8]. b SBH plotted against metal work function at interface between n-type Ge(001) and
metals [8]. c SBH plotted against metal work function at interface between n-type Ge and metals
with the insertion of a few monolayers of amorphous Ge 3 N 4 [8]
are preferable for low energy consumption. In this example, the dopant in the semiconductor segregates during annealing, which also causes the interfacial reaction
between the source (Ni) and semiconductor (Si), forming nickel silicide (NiSi).
This segregation layer (normally less than a couple of monolayers in thickness)
reduces the SBH between Si and NiSi (Fig. 5.18b [10]). The advantage of utilizing
interface segregation for interface layer insertion is that the segregation layer is
thermodynamically stable and does not change upon further annealing.