5.2 Modification of Band Alignment
109
metal
Si
metal
Si Si
Amorphous
and/or
nanocrystal Si
E VAC
E C
E V
E F
E F
E VAC
EA
φ A
SBH
change in only crystallinity does not
change band alignment
Amorphous
and/or
nanocrystal Si
E VAC
E C
E V
E F
E F
E VAC
EA
φ A
SBH
Fig. 5.15 Example of ineffective insertion of interlayer (see text for explanation)
Metal A
Metal B
Fig. 5.16 Schematic cross-sectional atomic illustrations of ideal interface with insertion layer (left),
atomic diffusion at the interface (middle), and interfacial reaction (right) (see text for explanation)
109
metal
Si
metal
Si Si
Amorphous
and/or
nanocrystal Si
E VAC
E C
E V
E F
E F
E VAC
EA
φ A
SBH
change in only crystallinity does not
change band alignment
Amorphous
and/or
nanocrystal Si
E VAC
E C
E V
E F
E F
E VAC
EA
φ A
SBH
Fig. 5.15 Example of ineffective insertion of interlayer (see text for explanation)
Metal A
Metal B
Fig. 5.16 Schematic cross-sectional atomic illustrations of ideal interface with insertion layer (left),
atomic diffusion at the interface (middle), and interfacial reaction (right) (see text for explanation)
