10.7.4
Periodic Array of SiNW Heterojunctions [83]
The OAG of SiNWs using thermal evaporation of SiO at 1200
C was studied in
detail as previously discussed and the growth at @900
C leads to straight, uniform
(in diameter) nanowires with a crystalline silicon core embedded in a SiO 2 sheath.
STM analysis was performed on such SiNWs that were dipped into HF to remove
the oxide sheath and then dispersed on a HOPG substrate and loaded into the
Fig. 10.39. STM images of: (a) a B-doped nanoparticle chain,
(b) a B-doped straight nanowire, and (c) boron-induced
reconstruction of SiNW [45].
10 Oxide-Assisted Growth of Silicon and Related Nanowires
356
Periodic Array of SiNW Heterojunctions [83]
The OAG of SiNWs using thermal evaporation of SiO at 1200
C was studied in
detail as previously discussed and the growth at @900
C leads to straight, uniform
(in diameter) nanowires with a crystalline silicon core embedded in a SiO 2 sheath.
STM analysis was performed on such SiNWs that were dipped into HF to remove
the oxide sheath and then dispersed on a HOPG substrate and loaded into the
Fig. 10.39. STM images of: (a) a B-doped nanoparticle chain,
(b) a B-doped straight nanowire, and (c) boron-induced
reconstruction of SiNW [45].
10 Oxide-Assisted Growth of Silicon and Related Nanowires
356