given in the previous and following sections. The stability of the oxide-removed
H-terminated Si wafer surfaces has been extensively investigated, and many techniques were developed to suppress its re-oxidation upon exposure to humidity.
These considerations initiated our FTIR study of the nature of the HF-dipped
SiNWs and their stability upon exposure to air and to water. The SiNWs had a distribution of diameters from a few nm to tens of nm. The thickness of the oxide
layer was about 1/4 to 1/3 of the nominal diameter. Micro ATR-FTIR was used to
Fig. 10.26. (a) Low magnification TEM image and (b) high
resolution TEM image and SAED of ZnS nanoribbons [75].
Note the high crystalline quality of the ZnO nanoribbons.
10.6 Chemical Properties of SiNWs 341
H-terminated Si wafer surfaces has been extensively investigated, and many techniques were developed to suppress its re-oxidation upon exposure to humidity.
These considerations initiated our FTIR study of the nature of the HF-dipped
SiNWs and their stability upon exposure to air and to water. The SiNWs had a distribution of diameters from a few nm to tens of nm. The thickness of the oxide
layer was about 1/4 to 1/3 of the nominal diameter. Micro ATR-FTIR was used to
Fig. 10.26. (a) Low magnification TEM image and (b) high
resolution TEM image and SAED of ZnS nanoribbons [75].
Note the high crystalline quality of the ZnO nanoribbons.
10.6 Chemical Properties of SiNWs 341