annealing treatment. Under proper annealing conditions, the MS layer can exhibit
a highly oriented relationship to the SiNW core.
10.4.3
Synthesis of Oriented SiC Nanowires [68]
One of the fascinating options opened by the OAG method is the possibility of
transforming from one type of nanowires to the other. A notable example is the
Fig. 10.17. Co implanted SiNWs annealed at 900
C. The inset
shows the TED of the Co polycrystals [67].
Fig. 10.18. The formation mechanism of
NiSi 2 /Si and CoSi 2 /Si on the surface of bare
SiNWs [67]. (a) Bare SiNWs implanted with
metal ions. (b) Formation of the metal/Si
mixture layer on one side of SiNW. (c) The
NiSi 2 /Si nanowire after low temperature
annealing. (d) CoSi 2 nanoparticles formed by
coarsening at high temperature annealing.
10 Oxide-Assisted Growth of Silicon and Related Nanowires
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