60
P. K. Das et al.
1 Introduction
In this chapter, we explore the carrier contribution to C 1 and C 2 which are significant
mechanical properties [1–29] of ED QFs of technologically viable materials, and
extensive studies have already been made in this regard [30–59].
The MOSFETs have been extensively studied in the literature [31, 60–78], and the
influence of electric field on C 1 and C 2 has also been investigated. An experimental
method of determining C 1 and C 2 has also been suggested.
2 Theoretical Background
The C 1 and C 2 assumes the forms
C 1 =
−T
2
0
9
dω 1
d(k 1 − k 2 )
(1)
and
C 2 =
T
3
0
27
d
2
ω 1
d(k 1 − k 2 ) 2
(2)
where T 0 is the deformation potential constant, ω 1 is the carrier statistics, k 1 is the
Fermi energy of the ED systems, k 2 is the energy when the carrier wave vector
vanishes in the energy wave vector relationship of the ED systems.
The magneto thermo-electric power T 1 in this case can be written as
T 1 =
10B(273 + t
0C
)
3ω 3 ω 1
dω 1
d(k 1 − k 2 )
(3)
where B is the square of the Boltzmann constant and ω 3 is the magnitude of the
carrier charge.
Using (1), (2) and (3), we can write
C 1 =
−ω 1 (T 0 )
2
ω 3
T 1
30B(273 + t 0C )
(4)
C 2 =
ω 1 ω 3 (T 0 )
3
T
2
1
300B 3/2 (273 + t 0C )
1 +
ω 1
T 1
dT 1
dω 1
(5)