Influence of Terahertz Frequency
on the Elastic Constants in 2D Systems
P. K. Das, R. Paul, S. Chakrabarti, B. Chatterjee, S. Pahari,
and K. P. Ghatak
Abstract We investigate the influence of terahertz frequency on the elastic constants
in extremely degenerate (ED) 2D systems taking quantized films (QFs) and accumulation layers (ALs) of nonlinear optical, tetragonal, ternary, quaternary, III–V, II–VI,
IV–VI and strained compounds, respectively. It has been found taking ED QFs and
ALs of specific materials of the important 2D electronic compounds as examples
that the elastic constants (C 1 and C 2 ) change with nano-size of the said QFs and
the two-dimensional carrier statistics per unit area in different oscillatory ways. The
influence of electric field for both the limits in inversion layers of non-parabolic
materials has also been studied. Besides, C 1 and C 2 are in nice agreement with our
suggestive relationships for determining them experimentally.
Keywords Elastic constants · Heavily doped semiconductors · Quantum wells ·
k.
p theory · Accumulation layers · Band structures
P. K. Das · K. P. Ghatak (B)
Department of Basic Science and Humanities, Institute of Engineering and Management &
University of Engineering and Management, Kolkata, India
e-mail: kamakhyaghatakcu@gmail.com
R. Paul · S. Chakrabarti
Department of Computer Science and Engineering, Institute of Engineering and Management &
University of Engineering and Management, Kolkata, India
B. Chatterjee
Department of Computer Science and Engineering, University of Engineering and Management
and Institute of Engineering and Management, Kolkata and Jaipur Y-12, Sector-V, Salt Lake
Electronics Complex, Kolkata, 700091 and Gurukul, Sikar Road NH 11, Near Udaipuria Mod,
Jaipur, Rajasthan 303807, India
S. Pahari
Administration Department, Jadavpur University, Kolkata 700032, India
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2021
A. Biswas et al. (eds.), Emerging Trends in Terahertz Engineering and System
Technologies, https://doi.org/10.1007/978-981-15-9766-4_5
59
on the Elastic Constants in 2D Systems
P. K. Das, R. Paul, S. Chakrabarti, B. Chatterjee, S. Pahari,
and K. P. Ghatak
Abstract We investigate the influence of terahertz frequency on the elastic constants
in extremely degenerate (ED) 2D systems taking quantized films (QFs) and accumulation layers (ALs) of nonlinear optical, tetragonal, ternary, quaternary, III–V, II–VI,
IV–VI and strained compounds, respectively. It has been found taking ED QFs and
ALs of specific materials of the important 2D electronic compounds as examples
that the elastic constants (C 1 and C 2 ) change with nano-size of the said QFs and
the two-dimensional carrier statistics per unit area in different oscillatory ways. The
influence of electric field for both the limits in inversion layers of non-parabolic
materials has also been studied. Besides, C 1 and C 2 are in nice agreement with our
suggestive relationships for determining them experimentally.
Keywords Elastic constants · Heavily doped semiconductors · Quantum wells ·
k.
p theory · Accumulation layers · Band structures
P. K. Das · K. P. Ghatak (B)
Department of Basic Science and Humanities, Institute of Engineering and Management &
University of Engineering and Management, Kolkata, India
e-mail: kamakhyaghatakcu@gmail.com
R. Paul · S. Chakrabarti
Department of Computer Science and Engineering, Institute of Engineering and Management &
University of Engineering and Management, Kolkata, India
B. Chatterjee
Department of Computer Science and Engineering, University of Engineering and Management
and Institute of Engineering and Management, Kolkata and Jaipur Y-12, Sector-V, Salt Lake
Electronics Complex, Kolkata, 700091 and Gurukul, Sikar Road NH 11, Near Udaipuria Mod,
Jaipur, Rajasthan 303807, India
S. Pahari
Administration Department, Jadavpur University, Kolkata 700032, India
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2021
A. Biswas et al. (eds.), Emerging Trends in Terahertz Engineering and System
Technologies, https://doi.org/10.1007/978-981-15-9766-4_5
59