58
A. Acharyya et al.
7. A. Acharyya, J.P. Banerjee, Potentiality of IMPATT devices as terahertz source: an avalanche
response time based approach to determine the upper cut-off frequency limits. IETE J. Res.
59(2), 118–127 (2013)
8. A. Lebedev, V.E. Chelnokov, Wide-gap semiconductors for high-power electronics. Semiconductors 33(9), 999–1001 (1999)
9. L. Yuan, A. James, J.A. Cooper, M.R. Melloch, K.J. Webb, Experimental demonstration of a
silicon carbide IMPATT oscillator. IEEE Electron. Dev. Lett. 22, 266–268 (2001)
10. K.V. Vassilevski, A.V. Zorenko, K. Zekentes, K. Tsagaraki, E. Bano, C. Banc, A. Lebedev, 4HSiC IMPATT diode fabrication and testing, in Technical Digest of International Conference on
SiC and Related Materials, Tsukuba, Japan (2001), pp. 713–714
11. P.B. Hart, Green and yellow emitting devices in vapor-grown gallium phosphide. Proc. IEEE
61(7), 880–884 (1973)
12. J.H. Kim, T. Kawazoe, M. Ohtsu, GaP homojunction LEDs fabricated by dressed-photonphonon-assisted annealing. Adv. Opt. Technol. 2015, 1–8 (2015)
13. C. Ratcliff, T.J. Grassman, J.A. Carlin, S.A. Ringel, High temperature step-flow growth of
gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition.
Appl. Phys. Lett. 99, 141905–1-3 (2011)
14. A. Acharyya, S. Banerjee, J.P. Banerjee, Effect of junction temperature on the large-signal
properties of a 94 GHz silicon based double-drift region impact avalanche transit time device.
J. Semiconductors 34(2), 024001–12 (2013)
15. A. Acharyya, J. Chakraborty, K. Das, S. Datta, P. De, S. Banerjee, J.P. Banerjee, Large-Signal
Characterization of DDR Silicon IMPATTs Operating up to 0.5 THz. Int. J. Microwave Wireless
Technol. 5(5), 567–578 (2013)
16. R.J. Chaffin, L.R. Dowson, Gallium phosphide high temperature diodes, in NASA Lewis
Research Center Proceeding of the Conference on High-Temp. Electron (1981), pp. 55–57
17. S. Kyuregyan, S.N. Yurkov, Room-temperature avalanche breakdown voltages of p-n junctions
made of Si, Ge, SiC, GaAs, GaP, and InP. Sov. Phys. Semicond. 23(10), 1126 (1989)
18. M.L. Young, D.R. Wight, Concentration dependence of the minority carrier diffusion length
and lifetime in GaP. J. Phys. D 7(13), 1824 (1974)
19. V.K. Arora, D.S.L. Mui, H. Morkoc, High-field electron-drift velocity and temperature in
gallium phosphide. J. Appl. Phys. 61(9), 4703 (1987)
20. R.H. Johnson, O. Eknoyan, High-field electron drift velocity measurements in gallium
phosphide. J. Appl. Phys. 58(3), 1402 (1985)
21. Y.O. Kao, O. Eknoyan, Electron and hole carrier mobilities for liquid phase epitaxially grown
GaP in the temperature range 200–550 K. J. Appl. Phys. 54(5), 2468 (1983)
22. Y.O. Kao, O. Eknoyan, Electronic archive: new semiconductor materials, characteristics and
properties. http://www.ioffe.ru/SVA/NSM/Semicond/index.html
23. T.A. Midford, R.L. Bernick, Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans.
Microwave Theo. Tech. 27, 483–492 (1979)
24. J.F. Luy, A. Casel, W. Behr, E. Kasper, A 90-GHz double-drift IMPATT diode made with Si
MBE. IEEE Trans. Electron Dev. 34, 1084–1089 (1987)
25. M. Wollitzer, J. Buchler, F. Schafflr, J.F. Luy, D-band Si-IMPATT diodes with 300 mW CW
output power at 140 GHz. Electron. Lett. 32, 122–123 (1996)
26. H. Eisele, Selective etching technology for 94 GHz, GaAs IMPATT diodes on diamond heat
sinks. Solid State Electron. 32(3), 253–257 (1989)
27. M. Tschernitz, J. Freyer, 140 GHz GaAs double-Read IMPATT diodes. Electron. Lett. 31(7),
582–583 (1995)
28. H. Eisele, C.C. Chen, G.O. Munns, G.I. Haddad, The potential of InP IMPATT diodes as highpower millimetre-wave sources: first experimental results. IEEE MTT-S Int. Microwave Symp.
Digest 2, 529–532 (1996)
A. Acharyya et al.
7. A. Acharyya, J.P. Banerjee, Potentiality of IMPATT devices as terahertz source: an avalanche
response time based approach to determine the upper cut-off frequency limits. IETE J. Res.
59(2), 118–127 (2013)
8. A. Lebedev, V.E. Chelnokov, Wide-gap semiconductors for high-power electronics. Semiconductors 33(9), 999–1001 (1999)
9. L. Yuan, A. James, J.A. Cooper, M.R. Melloch, K.J. Webb, Experimental demonstration of a
silicon carbide IMPATT oscillator. IEEE Electron. Dev. Lett. 22, 266–268 (2001)
10. K.V. Vassilevski, A.V. Zorenko, K. Zekentes, K. Tsagaraki, E. Bano, C. Banc, A. Lebedev, 4HSiC IMPATT diode fabrication and testing, in Technical Digest of International Conference on
SiC and Related Materials, Tsukuba, Japan (2001), pp. 713–714
11. P.B. Hart, Green and yellow emitting devices in vapor-grown gallium phosphide. Proc. IEEE
61(7), 880–884 (1973)
12. J.H. Kim, T. Kawazoe, M. Ohtsu, GaP homojunction LEDs fabricated by dressed-photonphonon-assisted annealing. Adv. Opt. Technol. 2015, 1–8 (2015)
13. C. Ratcliff, T.J. Grassman, J.A. Carlin, S.A. Ringel, High temperature step-flow growth of
gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition.
Appl. Phys. Lett. 99, 141905–1-3 (2011)
14. A. Acharyya, S. Banerjee, J.P. Banerjee, Effect of junction temperature on the large-signal
properties of a 94 GHz silicon based double-drift region impact avalanche transit time device.
J. Semiconductors 34(2), 024001–12 (2013)
15. A. Acharyya, J. Chakraborty, K. Das, S. Datta, P. De, S. Banerjee, J.P. Banerjee, Large-Signal
Characterization of DDR Silicon IMPATTs Operating up to 0.5 THz. Int. J. Microwave Wireless
Technol. 5(5), 567–578 (2013)
16. R.J. Chaffin, L.R. Dowson, Gallium phosphide high temperature diodes, in NASA Lewis
Research Center Proceeding of the Conference on High-Temp. Electron (1981), pp. 55–57
17. S. Kyuregyan, S.N. Yurkov, Room-temperature avalanche breakdown voltages of p-n junctions
made of Si, Ge, SiC, GaAs, GaP, and InP. Sov. Phys. Semicond. 23(10), 1126 (1989)
18. M.L. Young, D.R. Wight, Concentration dependence of the minority carrier diffusion length
and lifetime in GaP. J. Phys. D 7(13), 1824 (1974)
19. V.K. Arora, D.S.L. Mui, H. Morkoc, High-field electron-drift velocity and temperature in
gallium phosphide. J. Appl. Phys. 61(9), 4703 (1987)
20. R.H. Johnson, O. Eknoyan, High-field electron drift velocity measurements in gallium
phosphide. J. Appl. Phys. 58(3), 1402 (1985)
21. Y.O. Kao, O. Eknoyan, Electron and hole carrier mobilities for liquid phase epitaxially grown
GaP in the temperature range 200–550 K. J. Appl. Phys. 54(5), 2468 (1983)
22. Y.O. Kao, O. Eknoyan, Electronic archive: new semiconductor materials, characteristics and
properties. http://www.ioffe.ru/SVA/NSM/Semicond/index.html
23. T.A. Midford, R.L. Bernick, Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans.
Microwave Theo. Tech. 27, 483–492 (1979)
24. J.F. Luy, A. Casel, W. Behr, E. Kasper, A 90-GHz double-drift IMPATT diode made with Si
MBE. IEEE Trans. Electron Dev. 34, 1084–1089 (1987)
25. M. Wollitzer, J. Buchler, F. Schafflr, J.F. Luy, D-band Si-IMPATT diodes with 300 mW CW
output power at 140 GHz. Electron. Lett. 32, 122–123 (1996)
26. H. Eisele, Selective etching technology for 94 GHz, GaAs IMPATT diodes on diamond heat
sinks. Solid State Electron. 32(3), 253–257 (1989)
27. M. Tschernitz, J. Freyer, 140 GHz GaAs double-Read IMPATT diodes. Electron. Lett. 31(7),
582–583 (1995)
28. H. Eisele, C.C. Chen, G.O. Munns, G.I. Haddad, The potential of InP IMPATT diodes as highpower millimetre-wave sources: first experimental results. IEEE MTT-S Int. Microwave Symp.
Digest 2, 529–532 (1996)