Terahertz Radiation from Gallium Phosphide …
57
Fig. 10 Power output versus frequency plots [23–28]
GaP ATT sources is more promising than the ATT oscillators based on conventional
semiconductors.
Acknowledgements Dr. Arindam Biswas, Prof. Hiroshi Inokawa, Dr. Aritra Acharyya would
like to thanks the project grant for 2020 Cooperative Research at Research Center of Biomedical
Engineering, Tokyo Medical and Dental University, Japan (Grant No: 2051).
References
1. M. Mukherjee, N. Mazumder, S.K. Roy, Prospects of 4H-SiC double drift region IMPATT
device as a photo-sensitive high-power source at 0.7 terahertz frequency regime. Act. Passive
Electron. Compon. 2009, 1–9 (2009)
2. K. Panda, R. K. Parida, N. C. Agarwala, G. N. Dash, A comparative study on the high band gap
materials (GaN and SiC)-based IMPATTs, in Proceeding of Asia-Pacific Microwave Conference
(2007), pp. 1–4
3. K. Panda, D. Pavlidis, E. Alekseev, DC and high-frequency characteristics of GaN-based
IMPATTs. IEEE Trans. Electron Dev. 48, 820–823 (2001)
4. S. Banerjee, M. Mukherjee, J.P. Banerjee, Bias current optimization of Wurtzite-GaN DDR
IMPATT diode for high power operation at THz frequencies. Int. J. Adv. Sci. Technol. 16,
12–20 (2010)
5. A. Biswas, S. Sinha, A. Acharyya, A. Banerjee, S. Pal, H. Satoh, H. Inokawa, 1.0 THz GaN
IMPATT source: effect of parasitic series resistance. J. Infrared, Millimeter Terahertz Waves
39(10), 954–974 (2018)
6. A. Acharyya, J.P. Banerjee, Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources. Appl. Nanosci. 4, 1–14 (2014)
57
Fig. 10 Power output versus frequency plots [23–28]
GaP ATT sources is more promising than the ATT oscillators based on conventional
semiconductors.
Acknowledgements Dr. Arindam Biswas, Prof. Hiroshi Inokawa, Dr. Aritra Acharyya would
like to thanks the project grant for 2020 Cooperative Research at Research Center of Biomedical
Engineering, Tokyo Medical and Dental University, Japan (Grant No: 2051).
References
1. M. Mukherjee, N. Mazumder, S.K. Roy, Prospects of 4H-SiC double drift region IMPATT
device as a photo-sensitive high-power source at 0.7 terahertz frequency regime. Act. Passive
Electron. Compon. 2009, 1–9 (2009)
2. K. Panda, R. K. Parida, N. C. Agarwala, G. N. Dash, A comparative study on the high band gap
materials (GaN and SiC)-based IMPATTs, in Proceeding of Asia-Pacific Microwave Conference
(2007), pp. 1–4
3. K. Panda, D. Pavlidis, E. Alekseev, DC and high-frequency characteristics of GaN-based
IMPATTs. IEEE Trans. Electron Dev. 48, 820–823 (2001)
4. S. Banerjee, M. Mukherjee, J.P. Banerjee, Bias current optimization of Wurtzite-GaN DDR
IMPATT diode for high power operation at THz frequencies. Int. J. Adv. Sci. Technol. 16,
12–20 (2010)
5. A. Biswas, S. Sinha, A. Acharyya, A. Banerjee, S. Pal, H. Satoh, H. Inokawa, 1.0 THz GaN
IMPATT source: effect of parasitic series resistance. J. Infrared, Millimeter Terahertz Waves
39(10), 954–974 (2018)
6. A. Acharyya, J.P. Banerjee, Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources. Appl. Nanosci. 4, 1–14 (2014)