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Jena, T. Luo, Anisotropic thermal conductivity in single crystal β-gallium oxide. Appl. Phys.
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41. H. Sun, C.G. Torres Castanedo, K. Liu, K.H.Li, W. Guo, R. Lin, X. Liu, J. Li, X. Li, Valence
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42. W. Wei, Z. Qin, S. Fan, Z. Li, K. Shi, Q. Zhu, G. Zhang, Valence band offset of β-Ga 2 O 3 /wurtzite
GaN heterostructure measured by X-ray photoelectron spectroscopy. Nanoscale Res. Lett. 7,
562 (2012)
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44. K. Hanada, T. Moribayashi, T. Uematsu, S. Masuya, K. Koshi, K. Sasaki, A. Kuramata, O.
Ueda, M. Kasu, Observation of nanometer-sized crystalline grooves in as-grown β-Ga 2 O 3
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45. M. Kasu et al., Relationship between crystal defects and leakage current in β-Ga 2 O 3 Schottky
barrier diodes. Jpn. J. Appl. Phys. 55, 1202BB (2016)
46. K. Yamaguchi, First principles study on electronic structure of β-Ga 2 O 3 . Solid State Commun.
131, 739 (2004)
47. H. Peelaers, C.G. Van de Walle, Brillouin zone and band structure of β-Ga 2 O 3 . Phys. Status
Solidi B 252, 828 (2015)
48. M.H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, M. Higashiwaki, Electron channel mobility
in silicon-doped Ga 2 O 3 MOSFETs with a resistive buffer layer. Jpn. J. Appl. Phys. 55, 1202B9
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49. K. Ghosh, A. Kumar, U. Singisetti, Electrical Properties 2, Springer Series in Materials Science
vol. 293 (Springer, Cham, 2020)
50. A. Parisini, R. Fornari, Analysis of the scattering mechanisms controlling electron mobility in
β-Ga 2 O 3 crystals. Semicond. Sci. Technol. 31, 035023 (2016)
51. K. Ghosh, U. Singisetti, Ab initio calculation of electron–phonon coupling in monoclinic
β-Ga 2 O 3 crystal. Appl. Phys. Lett. 109, 072102 (2016)
52. K. Ghosh, U. Singisetti, Ab initio velocity-field curves in monoclinic β-Ga 2 O 3 crystal. Appl.
Phys. Lett. 122, 035702 (2017)
53. N. Ma, A. Verma, Z. Guo, T. Luo, D. Jena, Intrinsic electron mobility limits in β-Ga 2 O 3 . Appl.
Phys. Lett. 109(21), 212101 (2016)
54. Y. Kang, K. Krishnaswamy, H. Peelaers, C.G. Van de Walle, Fundamental limits on the electron
mobility of β-Ga 2 O 3 . J. Phys. Condens. Matter 29, 234001 (2017)
55. K. Ghosh, U. Singisetti, Electron mobility in monoclinic β-Ga 2 O 3 —effect of plasmon–phonon
coupling, anisotropy, and confinement. Appl. Phys. Lett. 122, 035702 (2017)
56. J.J. Barnes, R.J. Lomax, G.I. Haddad, Finite-element simulation of GaAs MESFET’s with
lateral doping profiles and submicron gates. IEEE Trans. Electron Devices 23(9), 1042–1048
(1976)
57. D.S. Atlas, Atlas user’s manual. Silvaco International Software, Santa Clara, CA, USA (2016)
58. A.L. Jaromin, D.D. Edwards, Subsolidus Phase Relationships in the Ga 2 O 3 -Al 2 O 3 -TiO 2 . J.
Am. Ceram. Soc. 88, 2573 (2005)
59. D.D. Edwards, P.E. Folkins, T.O. Mason, Phase equilibria in the Ga 2 O 3 -In 2 O 3 system. J. Am.
Ceram. Soc. 80, 253 (1997)
60. T. Oshima, T. Okuno, N. Arai, Y. Kobayashi, S. Fujita, (Al x Ga 1−x ) 2 O 3 thin film growth by
molecular beam epitaxy. Jpn. J. Appl. Phys. 48, 070202 (2009)
61. F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, Q. Guo, Wide bandgap engineering of
(AlGa) 2 O 3 films. Appl. Phys. Lett. 105, 162107 (2014)
62. M.H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, M. Higashiwaki, Field-plated Ga 2 O 3
MOSFETs with a breakdown voltage of over 750 V. IEEE Electron Device Lett. 37(2), 212–215
(2016). https://doi.org/10.1109/LED.2015.2512279
63. T. Oshima, Y. Kato, N. Kawano, A. Kuramata, S. Yamakoshi, S. Fujita, T. Oishi, M. Kasu,
Carrier confinement observed at modulation-doped β-(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 heterojunction
interface. Appl. Phys. Express 10(3), 035701 (2017)
R. Singh et al.
40. Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D.
Jena, T. Luo, Anisotropic thermal conductivity in single crystal β-gallium oxide. Appl. Phys.
Lett. 106, 111909 (2015)
41. H. Sun, C.G. Torres Castanedo, K. Liu, K.H.Li, W. Guo, R. Lin, X. Liu, J. Li, X. Li, Valence
and conduction band offsets of β-Ga 2 O 3 /AlN heterojunction. Appl. Phys. Lett. 111, 162105
(2017)
42. W. Wei, Z. Qin, S. Fan, Z. Li, K. Shi, Q. Zhu, G. Zhang, Valence band offset of β-Ga 2 O 3 /wurtzite
GaN heterostructure measured by X-ray photoelectron spectroscopy. Nanoscale Res. Lett. 7,
562 (2012)
43. K. Nakai, T. Nagai, K. Noami, T. Futagi, Characterization of defects in β-Ga 2 O 3 single crystals.
Jpn. J. Appl. Phys. 54, 015201 (2015)
44. K. Hanada, T. Moribayashi, T. Uematsu, S. Masuya, K. Koshi, K. Sasaki, A. Kuramata, O.
Ueda, M. Kasu, Observation of nanometer-sized crystalline grooves in as-grown β-Ga 2 O 3
single crystals. Jpn. J. Appl. Phys. 55, 030303 (2016)
45. M. Kasu et al., Relationship between crystal defects and leakage current in β-Ga 2 O 3 Schottky
barrier diodes. Jpn. J. Appl. Phys. 55, 1202BB (2016)
46. K. Yamaguchi, First principles study on electronic structure of β-Ga 2 O 3 . Solid State Commun.
131, 739 (2004)
47. H. Peelaers, C.G. Van de Walle, Brillouin zone and band structure of β-Ga 2 O 3 . Phys. Status
Solidi B 252, 828 (2015)
48. M.H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, M. Higashiwaki, Electron channel mobility
in silicon-doped Ga 2 O 3 MOSFETs with a resistive buffer layer. Jpn. J. Appl. Phys. 55, 1202B9
(2016)
49. K. Ghosh, A. Kumar, U. Singisetti, Electrical Properties 2, Springer Series in Materials Science
vol. 293 (Springer, Cham, 2020)
50. A. Parisini, R. Fornari, Analysis of the scattering mechanisms controlling electron mobility in
β-Ga 2 O 3 crystals. Semicond. Sci. Technol. 31, 035023 (2016)
51. K. Ghosh, U. Singisetti, Ab initio calculation of electron–phonon coupling in monoclinic
β-Ga 2 O 3 crystal. Appl. Phys. Lett. 109, 072102 (2016)
52. K. Ghosh, U. Singisetti, Ab initio velocity-field curves in monoclinic β-Ga 2 O 3 crystal. Appl.
Phys. Lett. 122, 035702 (2017)
53. N. Ma, A. Verma, Z. Guo, T. Luo, D. Jena, Intrinsic electron mobility limits in β-Ga 2 O 3 . Appl.
Phys. Lett. 109(21), 212101 (2016)
54. Y. Kang, K. Krishnaswamy, H. Peelaers, C.G. Van de Walle, Fundamental limits on the electron
mobility of β-Ga 2 O 3 . J. Phys. Condens. Matter 29, 234001 (2017)
55. K. Ghosh, U. Singisetti, Electron mobility in monoclinic β-Ga 2 O 3 —effect of plasmon–phonon
coupling, anisotropy, and confinement. Appl. Phys. Lett. 122, 035702 (2017)
56. J.J. Barnes, R.J. Lomax, G.I. Haddad, Finite-element simulation of GaAs MESFET’s with
lateral doping profiles and submicron gates. IEEE Trans. Electron Devices 23(9), 1042–1048
(1976)
57. D.S. Atlas, Atlas user’s manual. Silvaco International Software, Santa Clara, CA, USA (2016)
58. A.L. Jaromin, D.D. Edwards, Subsolidus Phase Relationships in the Ga 2 O 3 -Al 2 O 3 -TiO 2 . J.
Am. Ceram. Soc. 88, 2573 (2005)
59. D.D. Edwards, P.E. Folkins, T.O. Mason, Phase equilibria in the Ga 2 O 3 -In 2 O 3 system. J. Am.
Ceram. Soc. 80, 253 (1997)
60. T. Oshima, T. Okuno, N. Arai, Y. Kobayashi, S. Fujita, (Al x Ga 1−x ) 2 O 3 thin film growth by
molecular beam epitaxy. Jpn. J. Appl. Phys. 48, 070202 (2009)
61. F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, Q. Guo, Wide bandgap engineering of
(AlGa) 2 O 3 films. Appl. Phys. Lett. 105, 162107 (2014)
62. M.H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, M. Higashiwaki, Field-plated Ga 2 O 3
MOSFETs with a breakdown voltage of over 750 V. IEEE Electron Device Lett. 37(2), 212–215
(2016). https://doi.org/10.1109/LED.2015.2512279
63. T. Oshima, Y. Kato, N. Kawano, A. Kuramata, S. Yamakoshi, S. Fujita, T. Oishi, M. Kasu,
Carrier confinement observed at modulation-doped β-(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 heterojunction
interface. Appl. Phys. Express 10(3), 035701 (2017)