Ga 2 O 3 Based Heterostructure FETs (HFETs) for Microwave …
225
18. H. Zhou, M. Si, S. Alghamdi, G. Qiu, L. Yang, D.Y. Peide, High-performance depletion/enhancement mode β-Ga 2 O 3 on insulator (GOOI) field effect transistors with record drain
currents of 600/450 mA/mm. IEEE Electron Device Lett. 38, 103 (2017)
19. S. Krishnamoorthy, Z. Xia, S. Bajaj, M. Brenner, S. Rajan, Delta-doped beta-gallium oxide
field effect transistor. Appl. Phys. Express 10, 051102 (2017)
20. Y. Zhang, A. Neal, Z. Xia, C. Joishi, J.M. Johnson, Y. Zheng, S. Bajaj, M. Brenner, D. Dorsey, K.
Chabak, G. Jessen, J. Hwang, S. Mou, J.P. Heremans, S. Rajan, Demonstration of high mobility
and quantum transport in modulation-doped β-(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 heterostructures. Appl.
Phys. Lett. 112, 173502 (2018)
21. R. Singh, T.R. Lenka, R.T. Velpula, B. Jain, H.Q.T. Bui, H.P.T. Nguyen, A novel β-Ga 2 O 3
HEMT with f T of 166 GHz and X-band P OUT of 2.91 W/mm. Int. J. Numer. Model. Electron.
Netw. Devices Fields (Willey) (2020).https://doi.org/10.1002/jnm.2794
22. S. Kumar, R. Soman, A.S. Pratiyush, R. Muralidharan, D.N. Nath, A performance comparison
between β-Ga 2 O 3 and GaN HEMTs. IEEE Trans. Electron Devices 66(8), 3310–3317 (2019)
23. Z. Galazka, R. Uecker, K. Irmscher, M. Albrecht, D. Klimm, M. Pietsch, M. Brutzam, R.
Bertram, S. Ganschow, R. Fornari, Czochralski growth and characterization of β-Ga 2 O 3 single
crystals. Cryst. Res. Technol. 45(12), 1229–1236 (2010)
24. K. Irmscher, Z. Galazka, M. Pietsch, R. Uecker, R. Fornari, Electrical properties of β-Ga 2 O 3
single crystals grown by the Czochralski method. J. Appl. Phys. 110(6), 063720 (2011)
25. H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, Y. Yaguchi, Growth of β-Ga 2 O 3
single crystals by the edge-defined, film fed growth method. Jpn. J. Appl. Phys. Part 1 47(11R),
8506 (2008)
26. E.G. Víllora, K. Shimamura, Y. Yoshikawa, K. Aoki, N. Ichinose, Large-size β-Ga 2 O 3 single
crystals and wafers. J. Cryst. Growth 270(3–4), 420–426 (2004)
27. Y. Zhang et al., Evaluation of low-temperature saturation velocity in β-(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3
modulation-doped field-effect transistors. IEEE Trans. Electron Devices 66(3), 1574–1578
(2019)
28. S. Yoshioka, H. Hayashi, A. Kuwabara, F. Oba, K. Matsunaga, I. Tanaka, Structures and
energetics of Ga 2 O 3 polymorphs. J. Phys. Condens. Matter 19, 346211 (2007)
29. H. He, R. Orlando, M.A. Blanco, R. Pandey, E. Amzallag, I. Baraille, M. Rerat, First-principles
study of the structural, electronic, and optical properties of Ga 2 O 3 in its monoclinic and
hexagonal phases. Phys. Rev. B 74, 195123 (2006)
30. P. Kroll, R. Dronskowski, M. Martin, Formation of spinel-type gallium oxynitrides: a densityfunctional study of binary and ternary phases in the system Ga–O–N. J. Mater. Chem. 15, 3296
(2005)
31. H.Y. Playford, A.C. Hannon, E.R. Barney, R.I. Walton, Structures of uncharacterized
polymorphs of gallium oxide from total neutron diffraction. Chem A Eur. J. 19, 2803 (2013)
32. B. Bayraktaroglu, Assessment of gallium oxide technology. Air Force Research Laboratory
Report No. AFRL-RY-WP-TR-2017-0167 (2017)
33. L.L. Liu, M.K. Li, D.Q. Yu, J. Zhang, H. Zhang, C. Qian, Z. Yang, Fabrication and
characteristics of n-doped β-Ga 2 O 3 nanowires. Appl. Phys. A 98, 831 (2010)
34. Q. Feng, J. Liu, Y. Yang, D. Pan, Y. Xing, X. Shi, X. Xia, H. Liang, Catalytic growth and
characterization of single crystalline Zn doped p-type β-Ga 2 O 3 nanowires. J. Alloys Compd.
687 (2016)
35. Md.M. Islam et al., Chemical manipulation of hydrogen induced high p-type and n-type
conductivity in Ga 2 O 3 . Sci. Rep. 10, 6134 (2020)
36. E. Chikoidze et al., P-type β-gallium oxide: a new perspective for power and optoelectronic
devices. Mater. Today Phys. 3, 118–126 (2017)
37. E.G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, K. Aoki, Electrical conductivity and
carrier concentration control in β-Ga 2 O 3 by Si doping. Appl. Phys. Lett. 92, 202120 (2008)
38. J.B. Varley, J.R. Weber, A. Janotti, C.G. Van de Walle, Oxygen vacancies and donor impurities
in β-Ga 2 O 3 . Appl. Phys. Lett. 97, 142106 (2010)
39. M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui,
S. Yamakoshi, Recent progress in Ga 2 O 3 power devices. Semicond. Sci. Technol. 18, 034001
(2016)
225
18. H. Zhou, M. Si, S. Alghamdi, G. Qiu, L. Yang, D.Y. Peide, High-performance depletion/enhancement mode β-Ga 2 O 3 on insulator (GOOI) field effect transistors with record drain
currents of 600/450 mA/mm. IEEE Electron Device Lett. 38, 103 (2017)
19. S. Krishnamoorthy, Z. Xia, S. Bajaj, M. Brenner, S. Rajan, Delta-doped beta-gallium oxide
field effect transistor. Appl. Phys. Express 10, 051102 (2017)
20. Y. Zhang, A. Neal, Z. Xia, C. Joishi, J.M. Johnson, Y. Zheng, S. Bajaj, M. Brenner, D. Dorsey, K.
Chabak, G. Jessen, J. Hwang, S. Mou, J.P. Heremans, S. Rajan, Demonstration of high mobility
and quantum transport in modulation-doped β-(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 heterostructures. Appl.
Phys. Lett. 112, 173502 (2018)
21. R. Singh, T.R. Lenka, R.T. Velpula, B. Jain, H.Q.T. Bui, H.P.T. Nguyen, A novel β-Ga 2 O 3
HEMT with f T of 166 GHz and X-band P OUT of 2.91 W/mm. Int. J. Numer. Model. Electron.
Netw. Devices Fields (Willey) (2020).https://doi.org/10.1002/jnm.2794
22. S. Kumar, R. Soman, A.S. Pratiyush, R. Muralidharan, D.N. Nath, A performance comparison
between β-Ga 2 O 3 and GaN HEMTs. IEEE Trans. Electron Devices 66(8), 3310–3317 (2019)
23. Z. Galazka, R. Uecker, K. Irmscher, M. Albrecht, D. Klimm, M. Pietsch, M. Brutzam, R.
Bertram, S. Ganschow, R. Fornari, Czochralski growth and characterization of β-Ga 2 O 3 single
crystals. Cryst. Res. Technol. 45(12), 1229–1236 (2010)
24. K. Irmscher, Z. Galazka, M. Pietsch, R. Uecker, R. Fornari, Electrical properties of β-Ga 2 O 3
single crystals grown by the Czochralski method. J. Appl. Phys. 110(6), 063720 (2011)
25. H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, Y. Yaguchi, Growth of β-Ga 2 O 3
single crystals by the edge-defined, film fed growth method. Jpn. J. Appl. Phys. Part 1 47(11R),
8506 (2008)
26. E.G. Víllora, K. Shimamura, Y. Yoshikawa, K. Aoki, N. Ichinose, Large-size β-Ga 2 O 3 single
crystals and wafers. J. Cryst. Growth 270(3–4), 420–426 (2004)
27. Y. Zhang et al., Evaluation of low-temperature saturation velocity in β-(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3
modulation-doped field-effect transistors. IEEE Trans. Electron Devices 66(3), 1574–1578
(2019)
28. S. Yoshioka, H. Hayashi, A. Kuwabara, F. Oba, K. Matsunaga, I. Tanaka, Structures and
energetics of Ga 2 O 3 polymorphs. J. Phys. Condens. Matter 19, 346211 (2007)
29. H. He, R. Orlando, M.A. Blanco, R. Pandey, E. Amzallag, I. Baraille, M. Rerat, First-principles
study of the structural, electronic, and optical properties of Ga 2 O 3 in its monoclinic and
hexagonal phases. Phys. Rev. B 74, 195123 (2006)
30. P. Kroll, R. Dronskowski, M. Martin, Formation of spinel-type gallium oxynitrides: a densityfunctional study of binary and ternary phases in the system Ga–O–N. J. Mater. Chem. 15, 3296
(2005)
31. H.Y. Playford, A.C. Hannon, E.R. Barney, R.I. Walton, Structures of uncharacterized
polymorphs of gallium oxide from total neutron diffraction. Chem A Eur. J. 19, 2803 (2013)
32. B. Bayraktaroglu, Assessment of gallium oxide technology. Air Force Research Laboratory
Report No. AFRL-RY-WP-TR-2017-0167 (2017)
33. L.L. Liu, M.K. Li, D.Q. Yu, J. Zhang, H. Zhang, C. Qian, Z. Yang, Fabrication and
characteristics of n-doped β-Ga 2 O 3 nanowires. Appl. Phys. A 98, 831 (2010)
34. Q. Feng, J. Liu, Y. Yang, D. Pan, Y. Xing, X. Shi, X. Xia, H. Liang, Catalytic growth and
characterization of single crystalline Zn doped p-type β-Ga 2 O 3 nanowires. J. Alloys Compd.
687 (2016)
35. Md.M. Islam et al., Chemical manipulation of hydrogen induced high p-type and n-type
conductivity in Ga 2 O 3 . Sci. Rep. 10, 6134 (2020)
36. E. Chikoidze et al., P-type β-gallium oxide: a new perspective for power and optoelectronic
devices. Mater. Today Phys. 3, 118–126 (2017)
37. E.G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, K. Aoki, Electrical conductivity and
carrier concentration control in β-Ga 2 O 3 by Si doping. Appl. Phys. Lett. 92, 202120 (2008)
38. J.B. Varley, J.R. Weber, A. Janotti, C.G. Van de Walle, Oxygen vacancies and donor impurities
in β-Ga 2 O 3 . Appl. Phys. Lett. 97, 142106 (2010)
39. M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui,
S. Yamakoshi, Recent progress in Ga 2 O 3 power devices. Semicond. Sci. Technol. 18, 034001
(2016)