224
R. Singh et al.
Acknowledgements This publication is an outcome of the R&D work undertaken by the project
under the Visvesvaraya PhD Scheme of Ministry of Electronics and Information Technology
(MeitY), Govt. of India, being implemented by Digital India Corporation. Authors also acknowledge
DST-SERB (Science and Engineering Research Board), Govt. of India, for support.
References
1. E. Ahmadi, Y. Oshima, Materials issues and devices of α- and β-Ga 2 O 3 . J. Appl. Phys. 126,
160901 (2019). https://doi.org/10.1063/1.5123213
2. S.J. Pearton, F. Ren, M. Tadjer, J. Kim, Perspective: Ga 2 O 3 for ultra-high power rectifiers and
MOSFETS. J. Appl. Phys. 124(22), 220901 (2018)
3. S.J. Pearton et al., A review of Ga 2 O 3 materials, processing, and devices. Appl. Phys. Rev.
5(1), 011301 (2018)
4. R. Roy, V.G. Hill, E.F. Osborn, Polymorphism of Ga 2 O 3 and the system Ga 2 O 3 -H 2 O. J. Am.
Chem. Soc. 74(3), 719–722 (1952)
5. S. Yoshioka, H. Hayashi, A. Kuwabara, F. Oba, K. Matsunaga, I. Tanaka, Structures and
energetics of Ga 2 O 3 polymorphs. J. Phys. Condens. Matter. 19(34), 346211 (2007)
6. H. He, R. Orlando, M.A. Blanco, R. Pandey, E. Amzallag, I. Baraille, M. Rérat, First-principles
study of the structural, electronic, and optical properties of Ga 2 O 3 in its monoclinic and
hexagonal phases. Phys. Rev. B 74(19), 195123 (2006)
7. D. Shinohara, S. Fujita, Heteroepitaxy of corundum-structured α-Ga 2 O 3 thin films on α-Al 2 O 3
substrates by ultrasonic mist chemical vapor deposition. Jpn. J. Appl. Phys. 47, 7311–7313
(2008)
8. T. Oshima, T. Nakazono, A. Mukai, A. Ohtomo, Epitaxial growth of γ -Ga 2 O 3 films by mist
chemical vapor deposition. J. Cryst. Growth 359, 60 (2012)
9. H.H. Tippins, Optical absorption and photoconductivity in the band edge of β-Ga 2 O 3 . Phys.
Rev. 140(1A), A316 (1965)
10. N. Ueda, H. Hosono, R. Waseda, H. Kawazoe, Synthesis and control of conductivity of
ultraviolet transmitting β-Ga 2 O 3 single crystals. Appl. Phys. Lett. 70(26), 3561–3563 (1997)
11. M. Orita, H. Ohta, M. Hirano, H. Hosono, Deep-ultraviolet transparent conductive β-Ga 2 O 3
thin films. Appl. Phys. Lett. 77(25), 4166–4168 (2000)
12. M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, S. Yamakoshi, Gallium oxide (Ga 2 O 3 )
metal semiconductor field effect transistors on single crystal β-Ga 2 O 3 (010) substrates. Appl.
Phys. Lett. 100(1), 013504 (2012)
13. E.A. Jones, F.F. Wang, D. Costinett, Review of commercial GaN power devices and GaN-based
converter design challenges. IEEE J. Emerg. Sel. Top. Power Electron. 4(3), (2016)
14. Z. Hu, H. Zhou, Q. Feng, Field-plated lateral β-Ga 2 O 3 Schottky barrier diode with high reverse
blocking voltage of more than 3 kV and high power figure-of-merit of 500 MW/cm 2 . IEEE
Electron Device Lett. 39(10), 1564 (2018)
15. M.H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, M. Higashiwaki, Field-plated Ga 2 O 3
MOSFETs with a breakdown voltage of over 750 V. IEEE Electron Device Lett. 37(212),
(2016)
16. A.J. Green, K.D. Chabak, E.R. Heller, R.C. Fitch, M. Baldini, A. Fiedler, K. Irmscher, G.
Wagner, Z. Galazka, S.E. Tetlak, A. Crespo, 3.8-MV/cm Breakdown Strength of MOVPEGrown Sn-Doped β-Ga 2 O 3 MOSFETs. IEEE Electron Device Lett. 37, 902 (2016)
17. K.D. Chabak, N. Moser, A.J. Green, D.E. Walker Jr., S.E. Tetlak, E. Heller, A. Crespo, R. Fitch,
J.P. McCandless, K. Leedy, M. Baldini, Enhancement-mode Ga 2 O 3 wrap-gate fin field-effect
transistors on native (100) β-Ga 2 O 3 substrate with high breakdown voltage. Appl. Phys. Lett.
109, 213501 (2016)
R. Singh et al.
Acknowledgements This publication is an outcome of the R&D work undertaken by the project
under the Visvesvaraya PhD Scheme of Ministry of Electronics and Information Technology
(MeitY), Govt. of India, being implemented by Digital India Corporation. Authors also acknowledge
DST-SERB (Science and Engineering Research Board), Govt. of India, for support.
References
1. E. Ahmadi, Y. Oshima, Materials issues and devices of α- and β-Ga 2 O 3 . J. Appl. Phys. 126,
160901 (2019). https://doi.org/10.1063/1.5123213
2. S.J. Pearton, F. Ren, M. Tadjer, J. Kim, Perspective: Ga 2 O 3 for ultra-high power rectifiers and
MOSFETS. J. Appl. Phys. 124(22), 220901 (2018)
3. S.J. Pearton et al., A review of Ga 2 O 3 materials, processing, and devices. Appl. Phys. Rev.
5(1), 011301 (2018)
4. R. Roy, V.G. Hill, E.F. Osborn, Polymorphism of Ga 2 O 3 and the system Ga 2 O 3 -H 2 O. J. Am.
Chem. Soc. 74(3), 719–722 (1952)
5. S. Yoshioka, H. Hayashi, A. Kuwabara, F. Oba, K. Matsunaga, I. Tanaka, Structures and
energetics of Ga 2 O 3 polymorphs. J. Phys. Condens. Matter. 19(34), 346211 (2007)
6. H. He, R. Orlando, M.A. Blanco, R. Pandey, E. Amzallag, I. Baraille, M. Rérat, First-principles
study of the structural, electronic, and optical properties of Ga 2 O 3 in its monoclinic and
hexagonal phases. Phys. Rev. B 74(19), 195123 (2006)
7. D. Shinohara, S. Fujita, Heteroepitaxy of corundum-structured α-Ga 2 O 3 thin films on α-Al 2 O 3
substrates by ultrasonic mist chemical vapor deposition. Jpn. J. Appl. Phys. 47, 7311–7313
(2008)
8. T. Oshima, T. Nakazono, A. Mukai, A. Ohtomo, Epitaxial growth of γ -Ga 2 O 3 films by mist
chemical vapor deposition. J. Cryst. Growth 359, 60 (2012)
9. H.H. Tippins, Optical absorption and photoconductivity in the band edge of β-Ga 2 O 3 . Phys.
Rev. 140(1A), A316 (1965)
10. N. Ueda, H. Hosono, R. Waseda, H. Kawazoe, Synthesis and control of conductivity of
ultraviolet transmitting β-Ga 2 O 3 single crystals. Appl. Phys. Lett. 70(26), 3561–3563 (1997)
11. M. Orita, H. Ohta, M. Hirano, H. Hosono, Deep-ultraviolet transparent conductive β-Ga 2 O 3
thin films. Appl. Phys. Lett. 77(25), 4166–4168 (2000)
12. M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, S. Yamakoshi, Gallium oxide (Ga 2 O 3 )
metal semiconductor field effect transistors on single crystal β-Ga 2 O 3 (010) substrates. Appl.
Phys. Lett. 100(1), 013504 (2012)
13. E.A. Jones, F.F. Wang, D. Costinett, Review of commercial GaN power devices and GaN-based
converter design challenges. IEEE J. Emerg. Sel. Top. Power Electron. 4(3), (2016)
14. Z. Hu, H. Zhou, Q. Feng, Field-plated lateral β-Ga 2 O 3 Schottky barrier diode with high reverse
blocking voltage of more than 3 kV and high power figure-of-merit of 500 MW/cm 2 . IEEE
Electron Device Lett. 39(10), 1564 (2018)
15. M.H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, M. Higashiwaki, Field-plated Ga 2 O 3
MOSFETs with a breakdown voltage of over 750 V. IEEE Electron Device Lett. 37(212),
(2016)
16. A.J. Green, K.D. Chabak, E.R. Heller, R.C. Fitch, M. Baldini, A. Fiedler, K. Irmscher, G.
Wagner, Z. Galazka, S.E. Tetlak, A. Crespo, 3.8-MV/cm Breakdown Strength of MOVPEGrown Sn-Doped β-Ga 2 O 3 MOSFETs. IEEE Electron Device Lett. 37, 902 (2016)
17. K.D. Chabak, N. Moser, A.J. Green, D.E. Walker Jr., S.E. Tetlak, E. Heller, A. Crespo, R. Fitch,
J.P. McCandless, K. Leedy, M. Baldini, Enhancement-mode Ga 2 O 3 wrap-gate fin field-effect
transistors on native (100) β-Ga 2 O 3 substrate with high breakdown voltage. Appl. Phys. Lett.
109, 213501 (2016)