Ga 2 O 3 Based Heterostructure FETs (HFETs) for Microwave …
223
Table 2
Recent
β-Ga 2 O
3 devices, DC, and RF performances, and target applications
Ref. Device
Doping type
/
2DEG
density
(/cm 2
)
CBO
(eV)
Gate
length
(L
G )
I
DMAX
(A/mm)
g
m
(S/mm)
f
T /f
MAX (GHz) P
OUT (W/mm) Possible applications
[21] AlN/β-Ga
2 O
3
HEMT
Polarization/
5.67
× 10 13
1.75 50 nm
11.5
0.917
166/ 292
2.91
Microwave and
Millimeter-wave
[20]
β-(Al x Ga
1−x )
2 O
3 /Ga
2 O
3 heterostructure Si
delta-doped/
1.5
× 10 12
0.4
0.7
μm
0.046 0.039
3.1/ 13.1
–
Monoclinic (Al
x Ga
1−x )
2 O
3
semiconductor system
[74]
β-Ga 2 O
3 Delta-doped MESFET
Si
delta-doped/
9.9
× 10 12
–
0.12
μm
T
shaped
0.26
0.044
27/16
–
RF and microwave
[73]
β-Ga 2 O
3 MOSFET
–
–
0.5
μm
0.225 0.04
-
0.715
L band
(1–2 GHz)
223
Table 2
Recent
β-Ga 2 O
3 devices, DC, and RF performances, and target applications
Ref. Device
Doping type
/
2DEG
density
(/cm 2
)
CBO
(eV)
Gate
length
(L
G )
I
DMAX
(A/mm)
g
m
(S/mm)
f
T /f
MAX (GHz) P
OUT (W/mm) Possible applications
[21] AlN/β-Ga
2 O
3
HEMT
Polarization/
5.67
× 10 13
1.75 50 nm
11.5
0.917
166/ 292
2.91
Microwave and
Millimeter-wave
[20]
β-(Al x Ga
1−x )
2 O
3 /Ga
2 O
3 heterostructure Si
delta-doped/
1.5
× 10 12
0.4
0.7
μm
0.046 0.039
3.1/ 13.1
–
Monoclinic (Al
x Ga
1−x )
2 O
3
semiconductor system
[74]
β-Ga 2 O
3 Delta-doped MESFET
Si
delta-doped/
9.9
× 10 12
–
0.12
μm
T
shaped
0.26
0.044
27/16
–
RF and microwave
[73]
β-Ga 2 O
3 MOSFET
–
–
0.5
μm
0.225 0.04
-
0.715
L band
(1–2 GHz)