222
R. Singh et al.
achievements, small and large-signal high-frequency parameters are shown in Fig. 10,
and some key results are summarized in Table 2.
5 Conclusion
In summary, in spite of being the least mature among UWB semiconductors, Ga 2 O 3
is currently being focused for power electronics applications. Among other Ga 2 O 3
polymorphs, β-Ga 2 O 3 has been emerged as the most stable phase and extensively
being researched. Its excellent material properties make it a better choice for highvoltage applications, although device-level thermal managements would be required
due to its poor thermal conductivity. As mentioned above, the availability of highquality bulk crystals grown using cost-effective melt-growth techniques is the major
benefit of β-Ga 2 O 3 over other wide bandgap semiconductors, and is also a key
driver for research and development of β-Ga 2 O 3 based devices. There is a significant progress achieved in terms of development of process technology as well as
device design. Some of the notable achievements such as Schottky power rectifier
with breakdown voltage exceeding 3 kV, β-Ga 2 O 3 on insulator depletion-mode FET
having current density ~1.5 A/mm, and average breakdown field of 3.8 MV/cm
in β-Ga 2 O 3 MOSFET have been already demonstrated. Moreover, different highly
scaled β-Ga 2 O 3 FETs, such as delta-doped β-Ga 2 O 3 MESFET, and AlN/β-Ga 2 O 3
HEMT with current gain cut-off frequency of 27 GHz and 166 GHz are found suitable for microwave and millimeter-wave applications, respectively. These results
show the potential of Ga 2 O 3 material system for RF applications in microwave and
millimeter-wave frequency regime.
R. Singh et al.
achievements, small and large-signal high-frequency parameters are shown in Fig. 10,
and some key results are summarized in Table 2.
5 Conclusion
In summary, in spite of being the least mature among UWB semiconductors, Ga 2 O 3
is currently being focused for power electronics applications. Among other Ga 2 O 3
polymorphs, β-Ga 2 O 3 has been emerged as the most stable phase and extensively
being researched. Its excellent material properties make it a better choice for highvoltage applications, although device-level thermal managements would be required
due to its poor thermal conductivity. As mentioned above, the availability of highquality bulk crystals grown using cost-effective melt-growth techniques is the major
benefit of β-Ga 2 O 3 over other wide bandgap semiconductors, and is also a key
driver for research and development of β-Ga 2 O 3 based devices. There is a significant progress achieved in terms of development of process technology as well as
device design. Some of the notable achievements such as Schottky power rectifier
with breakdown voltage exceeding 3 kV, β-Ga 2 O 3 on insulator depletion-mode FET
having current density ~1.5 A/mm, and average breakdown field of 3.8 MV/cm
in β-Ga 2 O 3 MOSFET have been already demonstrated. Moreover, different highly
scaled β-Ga 2 O 3 FETs, such as delta-doped β-Ga 2 O 3 MESFET, and AlN/β-Ga 2 O 3
HEMT with current gain cut-off frequency of 27 GHz and 166 GHz are found suitable for microwave and millimeter-wave applications, respectively. These results
show the potential of Ga 2 O 3 material system for RF applications in microwave and
millimeter-wave frequency regime.