Ga 2 O 3 Based Heterostructure FETs (HFETs) for Microwave …
227
64. S.W. Kaun, F. Wu, J.S. Speck, β-(Al x Ga 1− x ) 2 O 3 /Ga 2 O 3 (010) heterostructures grown on βGa 2 O 3 (010) substrates by plasma-assisted molecular beam epitaxy. J. Vac. Sci. Technol.A 33,
041508 (2015)
65. E. Ahmadi, O.S. Koksaldi, X. Zheng, T. Mates, Y. Oshima, U.K. Mishra, J.S. Speck, Demonstration of β-(Al x Ga 1-x ) 2 O 3 /β-Ga 2 O 3 modulation-doped field-effect transistors with Ge as
dopant grown via plasma-assisted molecular beam epitaxy. Appl. Phys. Express 10(7), 071101
(2017)
66. S. Krishnamoorthy, Z. Xia, C. Joishi, Y. Zhang, J. McGlone, J. Johnson, M. Brenner,
A.R. Arehart, J. Hwang, S. Lodha, Modulation-doped β-(Al 0.2 Ga 0.8 ) 2 O 3 /Ga 2 O 3 field-effect
transistor. Appl. Phys. Lett. 111(2), 023502 (2017)
67. Y. Zhang, C. Joishi, Z. Xia, M. Brenner, S. Lodha, S. Rajan, Demonstration of β(Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 Double Heterostructure Field Effect Transistors. Appl. Phys. Lett. 112,
233503 (2018)
68. H. Okumura, Y. Kato, T. Oshima, T. Palacios, Demonstration of lateral field-effect transistors
using Sn-doped β-(AlGa) 2 O 3 (010). Jpn. J. Appl. Phys. 58, SBBD12 (2019)
69. R. Singh, T.R. Lenka, D.K. Panda, R.T. Velpula, B. Jain, H.Q.T. Bui, H.P.T. Nguyen, The dawn
of Ga 2 O 3 HEMTs for high power electronics—a review. Mater. Sci. Semicond. Process. 119,
105216 (2020)
70. A.J. Green, K.D. Chabak, M. Baldini, N. Moser, R.C. Fitch, G. Wagner, Z. Galazka, J. McCandless, A. Crespo, K. Leedy, G.H. Jessen, β-Ga 2 O 3 MOSFETs for radio frequency operation.
IEEE Electron Device Lett. 38(6), 790 (2017)
71. K.D. Chabak, D.E. Walker, A.J. Green, A. Crespo, M. Lindquist, K. Leedy, S. Tetlak, R. Gilbert,
N. A. Moser, G. Jessen, Sub-micron gallium oxide radio frequency field-effect transistors, in
Proceedings of IEEE IWMS-AMP, pp. 1–3 (2018)
72. M. Singh et al., Pulsed large-signal RF performance of field-plated Ga 2 O 3 MOSFETs. IEEE
Electron Device Lett. 39(10), 1572–1575 (2018)
73. N.A. Moser et al.,Pulsed power performance of β-Ga 2 O 3 MOSFETs at L-band.IEEE Electron
Device Lett 41(7), 989–992 (2020). https://doi.org/10.1109/LED.2020.2993555
74. Z. Xia et al., β-Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff
Frequency of 27 GHz. IEEE Electron Device Lett. 40(7), 1052–1055 (2019). https://doi.org/
10.1109/LED.2019.2920366
227
64. S.W. Kaun, F. Wu, J.S. Speck, β-(Al x Ga 1− x ) 2 O 3 /Ga 2 O 3 (010) heterostructures grown on βGa 2 O 3 (010) substrates by plasma-assisted molecular beam epitaxy. J. Vac. Sci. Technol.A 33,
041508 (2015)
65. E. Ahmadi, O.S. Koksaldi, X. Zheng, T. Mates, Y. Oshima, U.K. Mishra, J.S. Speck, Demonstration of β-(Al x Ga 1-x ) 2 O 3 /β-Ga 2 O 3 modulation-doped field-effect transistors with Ge as
dopant grown via plasma-assisted molecular beam epitaxy. Appl. Phys. Express 10(7), 071101
(2017)
66. S. Krishnamoorthy, Z. Xia, C. Joishi, Y. Zhang, J. McGlone, J. Johnson, M. Brenner,
A.R. Arehart, J. Hwang, S. Lodha, Modulation-doped β-(Al 0.2 Ga 0.8 ) 2 O 3 /Ga 2 O 3 field-effect
transistor. Appl. Phys. Lett. 111(2), 023502 (2017)
67. Y. Zhang, C. Joishi, Z. Xia, M. Brenner, S. Lodha, S. Rajan, Demonstration of β(Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 Double Heterostructure Field Effect Transistors. Appl. Phys. Lett. 112,
233503 (2018)
68. H. Okumura, Y. Kato, T. Oshima, T. Palacios, Demonstration of lateral field-effect transistors
using Sn-doped β-(AlGa) 2 O 3 (010). Jpn. J. Appl. Phys. 58, SBBD12 (2019)
69. R. Singh, T.R. Lenka, D.K. Panda, R.T. Velpula, B. Jain, H.Q.T. Bui, H.P.T. Nguyen, The dawn
of Ga 2 O 3 HEMTs for high power electronics—a review. Mater. Sci. Semicond. Process. 119,
105216 (2020)
70. A.J. Green, K.D. Chabak, M. Baldini, N. Moser, R.C. Fitch, G. Wagner, Z. Galazka, J. McCandless, A. Crespo, K. Leedy, G.H. Jessen, β-Ga 2 O 3 MOSFETs for radio frequency operation.
IEEE Electron Device Lett. 38(6), 790 (2017)
71. K.D. Chabak, D.E. Walker, A.J. Green, A. Crespo, M. Lindquist, K. Leedy, S. Tetlak, R. Gilbert,
N. A. Moser, G. Jessen, Sub-micron gallium oxide radio frequency field-effect transistors, in
Proceedings of IEEE IWMS-AMP, pp. 1–3 (2018)
72. M. Singh et al., Pulsed large-signal RF performance of field-plated Ga 2 O 3 MOSFETs. IEEE
Electron Device Lett. 39(10), 1572–1575 (2018)
73. N.A. Moser et al.,Pulsed power performance of β-Ga 2 O 3 MOSFETs at L-band.IEEE Electron
Device Lett 41(7), 989–992 (2020). https://doi.org/10.1109/LED.2020.2993555
74. Z. Xia et al., β-Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff
Frequency of 27 GHz. IEEE Electron Device Lett. 40(7), 1052–1055 (2019). https://doi.org/
10.1109/LED.2019.2920366
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