Index
530
Defects
bulk, 102
casting, 102–103
dislocations, 99
interfacial, 102
linear, 101–102
overview, 99–100
point, 100–101
Deflection control devices, 306–307
Deformation, bone, 27
Demagnetization energy, 223
Dendrimers, 469
Density
dislocation, 101–102
of materials, 207–211, 208f–210f
of states, 196, 196f
symbol for, 173t
Desalinization processes, 489–490
Design
building
architecture, 55
assemblies, 59, 61–65, 67–70
building engineering, 55
civil engineering, 55
design and development context,
55–58
environments, 59–61
modular, 67–70
systems, 59, 61–65, 67–70
types of, 58
unitary, 67–70
development
overall process, 70–74
structured processes in relation to
materials, 74–76
unstructured processes, 76–78
focus of, 47–49
materials in, 41–49
product
characterizing, 50–52
complexity and performance, 53–54
overview, 49–50
production volumes, 52
value, 52–53
textiles in, 450–453
of thermal environments, 312–315
vignette, 78–85
Design development and engineering
phase, 72–73, 80–81
Destructive interference, 345–346, 346f
Detail development phase, 72–73
Development
building, 55–58
overall process, 70–74
structured design processes, 74–76
unstructured design processes, 76–78
Diagnostic techniques, 469–470
Diamonds, 45–46
Dichroic filters, 437
Dichroic glasses, 350, 350f
Dichroics, 350–351
Dicyclopentadiene (DCPD), 424–425,
425f
Dielectric behavior, 117–122, 125
Dielectric breakdown, 126–127, 126f
Dielectric breakdown potential, 118
Dielectric constant, 118, 222
Dielectric loss, 121, 121f, 126
Dielectric loss factor, 118
Dielectric strength, 120
Dielectrics, light passing through,
138–139
Diffraction, Bragg’s law of, 287–288, 287f
Diffraction aperture, TEM, 278–279, 278f
Diffraction contrast, TEM, 279–280
Diffuse reflection, 134, 134f
Diffusivity, 192–193, 192f
Dilatation, 105, 106f
Dipole moments, 125, 125f
Dipoles, 95, 95f
Directly conflicting design objectives,
81–82
Discrete nanoobjects, 186f
Dislocation density, 101–102
Dislocation line, 110–111
Dislocations
crystalline imperfection, 110–111
edge, 101–102, 103f, 110f, 194
movement of caused by stress,
111–112
overview, 101
strain confinement, 194
strengthening mechanisms, 112–113
Dispersion hardening, 112–113, 112f
Displays, 360–363
Disruptive technologies, 523–524
Dissipation factor (D), 121
Dives in Misericordia church, 416–417,
417f
Documentation, 75f, 154–155, 156f,
157–158
Domain walls, 131–132, 132f
Domains, 131–132
Doping, 140, 140f
Drains, 236–237
Drexler, K. E., 3
Driver, amorphous metal, 301f
Drug delivery, 459, 470–471
Ductility, 107, 302
E
E (electric fields), 119
Earth’s clock of life, 23f
Easy axes, 222–223
Easy-cleaning materials, 418–419
EBM (electron beam machining), 268t,
269f
EBSD (electron backscattering
diffraction), 276
Echolocation, 365
Economic qualities of materials, 46
Ecoproperty symbols, 173t
Edge dislocations, 101–102, 103f, 110f,
194
EDM (micro electro-discharge
machining), 268, 268t
EDS (energy dispersive spectroscopy),
284–285
EELS (electron energy loss spectroscopy),
284–286, 285f
Elastic moduli, 103, 106f, 294
Elastic waves, 116–117
Elastomers, 88
Electric fields (E), 119
Electrical conductivity, 118–119, 122–124
Electrical environments
electronic materials, 328
general trends, 328–331
impacts, 331–334
Electrical properties
conductivity, 118–119
dielectric behavior, 119–122
nanomaterial, 218–222
overview, 117–118
physics of, 122–127
resistivity, 118–119
varying, 430–431
Electrical resistance, 124–125
Electrical resistivity, 118–119, 119f
Electrical symbols, 173t
Electrochemical capacitors, 388, 388f
Electrochemical cells, 385, 385f
Electrochromic materials, 354–355, 354f
Electrodeposition, 266
Electroless nickel, 266, 266f
Electroluminescence, 140–141, 355–356
Electrolytes, 385, 387–388
Electromagnetic (e-m) radiation, 12–13,
13f, 336. See also optical
properties
Electromagnetic environments, 61f
Electromagnetic spectrum, 336
Electromechanical design, 176t
Electron backscattering diffraction
(EBSD), 276
Electron beam lithography, 6
Electron beam machining (EBM), 268t,
269f
Electron energy loss spectroscopy (EELS),
284–286, 285f
Electron microscopy
AFMs, 283–284, 283f–284f
EBSD, 276
electron sources, 275
electron spectroscopy, 284–287, 286f
FIM, 281, 282f
overview, 274–275
SEM, 275–276, 276f–277f
STEM, 280–281, 282f
STMs, 281–283, 282f–283f
TEMs
contrast mechanisms, 279–280
diffraction aperture, 278–279, 278f
Précédent

- 534/544

Suivant