TABULATIONS OF SEMICONDUCTING MATERIAL PROPERTIES
367
Table 8.12. Index of refraction n [optical region, n = ( E / E , , ) ’ / ~ ] for types
l l L V and l L V l semiconductors
a
~
P
As
Sb
S
Se
Te
AI
-
-
3.2
Zn
2.36
2.89
3.56
Ga
3.2
3.30
3.8
Cd
2.50
-
-
In
3.1
3.5
3.96
Hg
2.85
-
“The values for Si and Ge are 3.49 and 3.99, respectively.
Source: Data from Handbook of Chemistty and Physics, CRC Press, Boca Raton, FL,
2002, p. 12-101.
Table 8.13. Melting point (in kelvins) for types llLV and l L V l semiconductors
a
P
As
Sb
S
Se
Te
~
~
~~
~
~
A1
-2100
2013
1330
Zn
2100
1790
1568
Ga
1750
1510
980
Cd
1750
1512
1365
In
1330
1215
798
Hg
1820
1070
943
”The values for Si and Ge are 1685 and 1231 K, respectively.
Source: Data from Handbook ojChemis0 and Physics, CRC Press, Boca Raton, FL, 2002, pp.
12-97, 12-98.
Table 8.14. Heats of formation (in kJ/rnol) at 300 K for types llLV
and l L V l semiconductors
a
P
As
Sb
S
Se
Te
AI
-
62 7
585
Zn
477
422
376
Ga
635
535
493
Cd
339
In
560
477
447
Hg
-
247
242
-
-
”The values for Si and Ge are 324 and 291 kJ/mol, respectively.
Source: Data from Handbook of Chemistry and Physics, CRC Press, Boca Raton, FL,
2002, p. 12-101.
Table 8.15. The Debye temperature OD (in kelvins) for types llLV
and l L V l semiconductors
a
P
As
Sb
S
Se
Te
A1
588
417
292
Zn
530
400
223
Ga
446
344
265
Cd
219
181
200
In
32 1
249
202
Hg
151
242
\
-
“The values for Si and Ge are 645 and 374 K, respectively.
Source: Data from Handbook ojChemistry and Physics, CRC Press, Boca Raton, FL,
2002, pp. 12-97, 12-98.