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TABULATIONS OF SEMICONDUCTING MATERIAL PROPERTIES
Table B.16. The specific heat C, [in J/(kg.K)] at 300 K for type
Ill-V semiconductorsa
P
A
Sb
S
Se
Te
-
-
-
AI
Zn
472
339
264
Ga
-
320
Cd
330
255
205
In
268
144
Hg
210
178
164
-
-
"The values for Si and Ge are 702 and 322 J/(kg. K), respectively.
Source: Data from Handbook of Chemistty and Physics, CRC Press, Boca Raton,
FL, 2002, pp. 12-98.
Table 8.17. Thermal conductivity [in mW/(cm.K)] at 300 K for types
Ill4 and lLVl semiconductors
a
P
As
Sb
S
Se
Te
A1
920
840
600
Zn
25 1
140
108
Ga
752
560
270
Cd
200
90
59
In
800
290
160
Hg
10
20
-
"The values for Si and Ge are 1240 and 640 mW/(cm.K), respectively.
Source: Data from Handbook of Chemisby and Physics, CRC Press, Boca Raton, FL,
2002, pp. 12-97, 12-98.
Table B.18. Linear thermal expansion coefficient (in 10-6K-1) at
300 K for type Ill-V semiconductors
a
P
As
Sb
S
Se
Te
A1
-
3.5
4.2
Zn
6.4
7.2
8.2
Ga
5.3
5.4
6.1
Cd
4.7
3.8
4.9
In
4.6
4.7
4.7
Hg
-
5.5
4.6
"The values for Si and Ge are 2.49 x
Source: Data from Hundbook ofchemistty and Physics, CRC Press, Boca Raton,
FL, 2002, p. 12-98.
and 6.1 x 10-6K-', respectively.
Table B.19. Volume compressibility (in lo-'' m2/N)
for type Ill-V semiconductors
a
P
As
Sb
-
-
A1
0.571
Ga
0.1 10
0.77 1
0.457
In
0.735
0.549
0.442
"The values for Si and Ge are 0.306 and 0.768 x 10-"m2/N,
respectively.
Source: Data from Handbook of Chernistiy and Physics, CRC
Press, Boca Raton, FL, 2002, p. 12-101.