366
TABULATIONS OF SEMICONDUCTING MATERIAL PROPERTIES
Table B.9. Mobilities at room temperature [in cm2/(V.s)] for types Ill4 and lCVl
semiconductors
a
P
As
Sb
S
Se
Te
Electron Mobilities
A1
80
1,200
200400
Zn
180
540
340
Ga
300
8,800
4,000
Cd
1,200
In
4,600
33,000
78,000
Hg
250
20,000
25,000
Hole Mobilities
Ga
150
400
1,400
Cd
50
In
150
460
750
Hg
z1.5
350
-
A1
420
550
Zn
5 (400°C)
28
100
-
-
-
"The electron mobilities are given first, and the hole mobilities are presented below them. The mobilities
for Si and Ge for electrons are 1900 and 3800, respectively, and corresponding values for holes are 500
and 1820.
Source: Data from Handbook of Chemistry and Physics, CRC Press, Boca Raton, FL, 2002, p. 12-101.
Table B.10. Ionization energies (in meV) of group 111
acceptors and group V donors in Si and Ge
Ionization
Energy (mev)
Ion
Group
Type
Si
Ge
B
AI
Ga
In
P
As
Sb
Bi
I11
111
I11
I11
V
V
V
V
Acceptor
Acceptor
Acceptor
Acceptor
Donor
Donor
Donor
Donor
45
10
67
11
71
11
155
12
45
13
54
14
43
10
71
13
Source: Data from G . Bums, Solid Sfafe Physics, Academic Press,
New York, 1985, p. 172.
Table B.11. Static relative dielectric constants E / E ~ for types llLV
and l L V l semiconductors
a
P
As
Sb
S
Se
Te
AI
10.9
11
Zn
8.9
9.2
10.4
Ga
11.1
13.2
15.7
Cd
7.2
In
12.4
14.6
17.7
-
-
"The values for Si and Ge are 11.8 and 16, respectively.
Source: Data from Handbook of Chemise and Physics, CRC Press, Boca Raton, FL,
2002, p. 12-101.