Table B.8. Effective masses m+ relative to free-electron mass m, of conduction band electrons and three types of valence band holesa
Electron
Heavy-Hole
Light-Hole
Splitoff Hole
Spin-Orbit
Effective Mass
Effective Mass
Effective Mass
Effective Mass
Splitting Aso (eV)
P
As
Sb
P
As
Sb
P
As
Sb
P
As
Sb
P
As
Sb
Ga
-
0.067
0.047
0.57
0.53
0.8
0.18
0.08
0.05
0.25
0.15
0.12
0.08
0.34
0.75
In
0.073
0.026
0.014
0.58
0.4
0.42
0.12
0.026
0.016
0.12
0.14
0.43
0.11
0.38
0.81
Ge 0.41
Si 0.54, Ge 0.34
Si 0.15, Ge 0.043
Si 0.23, Ge 0.09
Si 0.044, Ge 0.295
"The spin-rbit splitting parameter As0 is also listed. The splitoff hole effective mass arises from spin-orbit coupling, which was not taken into account in this book.
Corresponding values for Si and Ge are listed below the 111-V values.
Source: Data are from P. Y. Yu and M. Cardona, Fundamentals of Semiconductors, Springer, Berlin, 2001, pp. 71, 75, supplemented by G. Bums, Solid State Physics,
Academic Press, New York, p. 312.