364
TABULATIONS OF SEMICONDUCTING MATERIAL PROPERTIES
Table B.6. Bandgaps E, expressed in electronvolts for type llCV semiconductors
(on left) and type lCVl materials (on right)’
P
As
Sb
S
Se
Te
AI
(2.45)/3.62
(2.15)/3.14
(1.63)/2.22
Zn
3.68
2.7
2.26
G d
(2.27)/2.78
1.43
0.70
Cd
2.49
1.75
1.43
In
1.35
0.36
0.18
Hg
-
-0.061
-0.30
(4.4 K)
“Indirect bandgaps are given in parentheses. The values for Si and Ge are (1.1 1)/3.48 and (0.66)/0.81 e y
respectively.
Source: Data from I? Y. Yu and M. Cardona, Fundamentals of Semiconductors, Springer, Berlin, 2001,
table on inside front cover.
Table 8.7. Temperature dependence of bandgap d h / d T ( l n ~ C V / ~ C )
and pressure
dependence of bandgap dE,/dP (in moV/GPa)’
P
As
Sb
S
Se
Te
Tempemture Dependence dE,/dT
AI
-
(-0.4)/-0.51
(-3.5) Zn
-0.47 -0.45
-0.52
Ga
(-0.52)/-0.65
-0.395
-0.37
Cd
-0.41 -0.36
-0.54
In
-0.29
-0.35
-0.29
Si (-0.28)
Ge (-0.37)/-0.4
Pressure Dependence dE,/dP
A1
-
(-5.1)/102
(-15)
Zn
57
70
83
Ga
(-14)/105
115
140
Cd
45
50
80
In
108
98
157
Si (-14)
Ge (50)/121
“The corresponding values for Si and Ge are listed below the 111-V values.
Source: Data from I? Y. Yu and M. Cardona, Fundamentals of Semiconduczors, Springer, Berlin,
2001, table on inside of front cover; see also Handbook of Chemistry and Physics, CRC Press, Boca
Raton, FL, 2002, pp. 12-105.