TABULATIONS OF SEMICONDUCTING MATERIAL PROPERTIES
363
Table B.3. Comparison of the nearest-neighbor distance a a a of several
semiconductor llLV and l L V l binary compounds AC with the sums of the
corresponding ionic radii, and with the sums of the corresponding monatomic
lattice radii'
a &a
A" + C"+
A + B
Compound
Compound
Distance
Ionic Sum
Monatomic Sum
Type
ZnS
0.234
0.258
0.23 1
Semiconductor
A1P
0.236
0.263
0.253
Semiconductor
GaAs
0.245
0.284
0.246
Semiconductor
CdS
0.252
0.281
0.247
Semiconductor
HgTe
0.279
0.321
0.294
Semiconductor
InSb
0.281
0.326
0.308
Semiconductor
NaCl
0.282
0.278
0.350
Alkali halide
KBr
0.353
0.353
0.404
Alkali halide
RbI
0.367
0.367
0.419
Alkali halide
MgO
0.21 1
0.198
01232
Alkaline-earth
CaS
0.285
0.283
0.299
Alkaline-earth
SrSe
0.301
0.303
0.419
Alkaline-earth
chalcogenide
chalcogenide
chalcogenide
"For comparison purposes data are shown for some alkali halides and alkaline-earth chalcogenides.
The distances are in nanometers.
Table B.4. Molecular mass of groups llLV and l L V l compounds'
P
As
Sb
S
Se
Te
A1
57.95
101.90
148.73
Zn
97.43
144.34
192.99
Ga
100.69
144.64
191.47
Cd
144.46
191.36
240.00
In
145.79
189.74
256.57
Hg
232.65
279.55
328.19
____
~
____
~ _ _ _ _
~
"The atomic masses of Si and Ge, respectively, are & (56.172) and & (145. IS).
Source: Data from Handbook of' Chemistry and Physics, CRC Press, Boca Raton, FL, 2002,
pp. 12-57, 12-58.
Table 8.5. Density in g/cm3 of groups llLV and l L V l compounds'
P
As
Sb
S
Se
Te
A1
2.42
3.81
4.22
Zn
4.08
5.42
6.34
Ga
4.13
5.32
5.62
Cd
4.82
0.567
5.86
In
4.79
5.66
5.78
Hg
7.73
8.25
8.17
"The densities of Si and Ge, respectively, are 2.3283 and 5.3234.
Source: Data from Handbook of Chemistry and Physics, CRC Press, Boca Raton, FL, 2002, pp. 12-57,
12-58.