362
TABULATIONS OF SEMICONDUCTING MATERIAL PROPERTIES
Table B.l. Lattice constant a in units of nanometers for types llLV (left) and lLVl (right)
semiconductors
e
P
As
Sb
S
Se
Te
AI
0.545
0.566
0.614
Zn
0.541
0.567
0.610
Ga
0.545
0.565
0.610
Cd
0.583
0.605
0.648
In
0.587
0.606
0.648
Hg
0.585
0.608
0.646
"The values for Si and Ge are 0.543 and 0.566 nm, respectively.
Source: Data from R. W. G . Wyckoff, Ciystal Structures, Wiley, New York, 1963, Vol. 1, p. 110.
tables most often referred to throughout the book. For the convenience of the reader,
we gather together in Tables B.12-B.21 data on some additional properties that may
be of interest, presented in the same format as the earlier tabulated data. These
include indices of refraction (Table B.12), melting points and heats of formation
(Tables B.13 and B.14), and some thermal properties such as Debye temperatures
OD, specific heats, and thermal conductivities (Tables B. 15-B. 17). The mechanical
properties tabulated are linear expansion, volume compressibility, and microhardness (Tables B.18-B.20). Finally, we list in Table B.21 the diamagnetic susceptibilities of several 111-V compounds. Some tables include more limited data entries
than others because complete data sets are not readily available for every property.
Table B.2. Atomic radii from monatomic crystals and ionic radii of several
elements found in semiconductors
Group
Atomic Number
Atom
Radius
Ion
Radius
I1
I1
I1
111
I11
I11
rv
IV
V
V
V
VI
VI
VI
30
48
80
13
31
49
14
32
15
33
51
16
34
52
Zn
Cd
Hg
AI
Ga
In
Si
Ge
P
As
Sb
S
Se
Te
0.133
0.149
0.151
0.143
0.122
0.163
0.118
0.123
0.110
0.124
0.145
0.101
0.1 13
0.143
Zn2+
Cd2+
Hg2+
AI3+
Ga3'
1 d +
Te20.074
0.097
0.110
0.051
0.0602
0.081
0.212
0.222
0.245
0.184
0.191
0.21 1
Source: Data from Handbook of Chemistn, and Physics, CRC Press, Boca Raton, FL, 2002,
pp. F189, F-191.
TABULATIONS OF SEMICONDUCTING MATERIAL PROPERTIES
Table B.l. Lattice constant a in units of nanometers for types llLV (left) and lLVl (right)
semiconductors
e
P
As
Sb
S
Se
Te
AI
0.545
0.566
0.614
Zn
0.541
0.567
0.610
Ga
0.545
0.565
0.610
Cd
0.583
0.605
0.648
In
0.587
0.606
0.648
Hg
0.585
0.608
0.646
"The values for Si and Ge are 0.543 and 0.566 nm, respectively.
Source: Data from R. W. G . Wyckoff, Ciystal Structures, Wiley, New York, 1963, Vol. 1, p. 110.
tables most often referred to throughout the book. For the convenience of the reader,
we gather together in Tables B.12-B.21 data on some additional properties that may
be of interest, presented in the same format as the earlier tabulated data. These
include indices of refraction (Table B.12), melting points and heats of formation
(Tables B.13 and B.14), and some thermal properties such as Debye temperatures
OD, specific heats, and thermal conductivities (Tables B. 15-B. 17). The mechanical
properties tabulated are linear expansion, volume compressibility, and microhardness (Tables B.18-B.20). Finally, we list in Table B.21 the diamagnetic susceptibilities of several 111-V compounds. Some tables include more limited data entries
than others because complete data sets are not readily available for every property.
Table B.2. Atomic radii from monatomic crystals and ionic radii of several
elements found in semiconductors
Group
Atomic Number
Atom
Radius
Ion
Radius
I1
I1
I1
111
I11
I11
rv
IV
V
V
V
VI
VI
VI
30
48
80
13
31
49
14
32
15
33
51
16
34
52
Zn
Cd
Hg
AI
Ga
In
Si
Ge
P
As
Sb
S
Se
Te
0.133
0.149
0.151
0.143
0.122
0.163
0.118
0.123
0.110
0.124
0.145
0.101
0.1 13
0.143
Zn2+
Cd2+
Hg2+
AI3+
Ga3'
1 d +
Te20.074
0.097
0.110
0.051
0.0602
0.081
0.212
0.222
0.245
0.184
0.191
0.21 1
Source: Data from Handbook of Chemistn, and Physics, CRC Press, Boca Raton, FL, 2002,
pp. F189, F-191.