352
NANOMACHINES AND NANODEVICES
h
u)
E"
a
m
c
1
c
i
a
a
w
0
1.1
1'3 1
-0.1 t-I " ' I ' ' ' ' I ' ' ' ' I ' ' I ' I ' ' ' ' I ' ' ' 1 1
-0.5
0
0.5
1
1.5
2
2.5
VOLTAGE (V)
Figure 13.19. Current-voltage characteristics of the electronic switch shown in Fig. 13.18.
[Adapted from J. Chen, Science 286, 1550 (1999).]
To fabricate this switch, an aluminum electrode was made by lithographically
patterning 0.6-pm-diameter aluminum wires on a silica substrate. This electrode was
then exposed to oxygen to allow a layer of A1203 to form on it. Next a single
monolayer of the roxatane molecule, such as the one shown in Fig. 13.20, was
deposited as a Langmuir-Blodgett film, which was discussed in Chapter 10. Then a
5-pm layer of titanium followed by a thicker layer of aluminum were evaporated
through a contact mask using electron beam deposition.
Figure 13.22 shows the current-voltage characteristics of this device. The application of -2 the read mode, caused a sharp increase in current. The switch could be
+ e -
-
c - - -
- e -
4PFe
A n n
I
I
o o o o T 7 b
Figure 13.20. Roxatane molecule used in a switch illustrated in Fig. 13.21 to make moleculebased logic gates. [Adapted from C. P. Collier et al., Science 285, 391 (1999).]
NANOMACHINES AND NANODEVICES
h
u)
E"
a
m
c
1
c
i
a
a
w
0
1.1
1'3 1
-0.1 t-I " ' I ' ' ' ' I ' ' ' ' I ' ' I ' I ' ' ' ' I ' ' ' 1 1
-0.5
0
0.5
1
1.5
2
2.5
VOLTAGE (V)
Figure 13.19. Current-voltage characteristics of the electronic switch shown in Fig. 13.18.
[Adapted from J. Chen, Science 286, 1550 (1999).]
To fabricate this switch, an aluminum electrode was made by lithographically
patterning 0.6-pm-diameter aluminum wires on a silica substrate. This electrode was
then exposed to oxygen to allow a layer of A1203 to form on it. Next a single
monolayer of the roxatane molecule, such as the one shown in Fig. 13.20, was
deposited as a Langmuir-Blodgett film, which was discussed in Chapter 10. Then a
5-pm layer of titanium followed by a thicker layer of aluminum were evaporated
through a contact mask using electron beam deposition.
Figure 13.22 shows the current-voltage characteristics of this device. The application of -2 the read mode, caused a sharp increase in current. The switch could be
+ e -
-
c - - -
- e -
4PFe
A n n
I
I
o o o o T 7 b
Figure 13.20. Roxatane molecule used in a switch illustrated in Fig. 13.21 to make moleculebased logic gates. [Adapted from C. P. Collier et al., Science 285, 391 (1999).]