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24 Transistors
Fig. 24.37 Cross-section
TEM images of strained a
PMOS and b NMOS
transistors. Adapted from
[2086]. c–f Modelling of
strain distribution: PMOS
without c and with e
Si 0.83 Ge 0.17 pockets,
NMOS without d and with
f tensile cap layer.
Adapted from [2087]