10
1 Introduction
Fig. 1.12 Schematics of
GaAs-based laser diode.
The active layer is
highlighted in red.
Adapted from [124]
1966
C.A. Mead—proposal of the MESFET (‘Schottky Barrier Gate FET’) [135].
1967
Zh.I. Alferov—report of the first DH laser on the basis of Ga(As,P) at 77 K [136, 137].
W.W. Hooper and W.I. Lehrer—first realization of a MESFET [138].
1968
DH laser on the basis of GaAs/(Al,Ga)As at room temperature, independently developed by Zh.I. Alferov
[139] and I. Hayashi [140].
GaP:N LEDs with yellow-green emission (550 nm) and 0.3% efficiency [141].
1968
SiC blue LED with efficiency of 0.005% [142].
1970
W.S. Boyle and G.E. Smith—invention of the charge coupled device (CCD) [143, 144].
1971
R.F. Kazarinov and R.A. Suris—proposal of the quantum cascade laser [145].
1975
R.S. Pengelly and J.A. Turner—first monolithic microwave integrated circuit (MMIC) (Fig. 1.13) [146]
1992
S. Nakamura—growth of high-quality group-III–nitride thin films [147], blue nitride heterostructure
LED with efficiency exceeding 10% (1995) [148] (Fig. 1.14a). Later the white LED was built by
combining a blue LED with yellow phosphors (Fig. 1.14b, c).
1 Introduction
Fig. 1.12 Schematics of
GaAs-based laser diode.
The active layer is
highlighted in red.
Adapted from [124]
1966
C.A. Mead—proposal of the MESFET (‘Schottky Barrier Gate FET’) [135].
1967
Zh.I. Alferov—report of the first DH laser on the basis of Ga(As,P) at 77 K [136, 137].
W.W. Hooper and W.I. Lehrer—first realization of a MESFET [138].
1968
DH laser on the basis of GaAs/(Al,Ga)As at room temperature, independently developed by Zh.I. Alferov
[139] and I. Hayashi [140].
GaP:N LEDs with yellow-green emission (550 nm) and 0.3% efficiency [141].
1968
SiC blue LED with efficiency of 0.005% [142].
1970
W.S. Boyle and G.E. Smith—invention of the charge coupled device (CCD) [143, 144].
1971
R.F. Kazarinov and R.A. Suris—proposal of the quantum cascade laser [145].
1975
R.S. Pengelly and J.A. Turner—first monolithic microwave integrated circuit (MMIC) (Fig. 1.13) [146]
1992
S. Nakamura—growth of high-quality group-III–nitride thin films [147], blue nitride heterostructure
LED with efficiency exceeding 10% (1995) [148] (Fig. 1.14a). Later the white LED was built by
combining a blue LED with yellow phosphors (Fig. 1.14b, c).