1.1 Timetable and Key Achievements
9
(a)
(b)
Fig. 1.10 a The first integrated circuit, 1958 (germanium, 11 × 1.7 mm 2 ). b The first planar integrated circuit, 1959
(silicon, diameter: 1.5 mm)
Fig. 1.11 (a) Optical image of planar pnp silicon transistor (2N1613 [120]), 1959. The contacts are Al surfaces (not
bonded). (b) Housing of such transistor cut open
1959
J. Hoerni
16 and R. Noyce—first realization of a planar transistor (in silicon) (Fig. 1.11) [115–119].
1960
D. Kahng and M.M. Atalla—first realization of a MOSFET [121, 122].
1962
The first semiconductor laser on GaAs basis at 77 K at GE [123, 124] (Fig. 1.12) and at IBM [125] and
MIT [126].
First visible laser diode [127].
17
1963
Proposal of a double heterostructure laser (DH laser) by Zh.I. Alferov [130, 131] and H. Kroemer [132,
133].
J.B. Gunn—discovery of the Gunn effect, the spontaneous microwave oscillations in GaAs and InP at
sufficiently large applied electric field (due to negative differential resistance) [134].
16 The Swiss born Jean Hoerni also contributed $12 000 for the building of the first school in the Karakoram Mountain
area in Pakistan and has continued to build schools in Pakistan and Afghanistan as described in [114].
17 Remarks on the discovery and further development of the laser diode can be found in [128, 129].
9
(a)
(b)
Fig. 1.10 a The first integrated circuit, 1958 (germanium, 11 × 1.7 mm 2 ). b The first planar integrated circuit, 1959
(silicon, diameter: 1.5 mm)
Fig. 1.11 (a) Optical image of planar pnp silicon transistor (2N1613 [120]), 1959. The contacts are Al surfaces (not
bonded). (b) Housing of such transistor cut open
1959
J. Hoerni
16 and R. Noyce—first realization of a planar transistor (in silicon) (Fig. 1.11) [115–119].
1960
D. Kahng and M.M. Atalla—first realization of a MOSFET [121, 122].
1962
The first semiconductor laser on GaAs basis at 77 K at GE [123, 124] (Fig. 1.12) and at IBM [125] and
MIT [126].
First visible laser diode [127].
17
1963
Proposal of a double heterostructure laser (DH laser) by Zh.I. Alferov [130, 131] and H. Kroemer [132,
133].
J.B. Gunn—discovery of the Gunn effect, the spontaneous microwave oscillations in GaAs and InP at
sufficiently large applied electric field (due to negative differential resistance) [134].
16 The Swiss born Jean Hoerni also contributed $12 000 for the building of the first school in the Karakoram Mountain
area in Pakistan and has continued to build schools in Pakistan and Afghanistan as described in [114].
17 Remarks on the discovery and further development of the laser diode can be found in [128, 129].