I thr
threshold current
j; j
current density
j
total orbital momentum
j s
saturation current density
j thr
threshold current density
k
wavenumber, Boltzmann constant
k
wavevector
k B
Boltzmann constant
k F
Fermi wavevector
l
angular orbital momentum
L
length of line element
L
line vector (of dislocation)
L D
diffusion length
L z
quantum-well thickness
m
mass
m 0
free electron mass
m
Ã
effective mass
m
Ã
ij
effective mass tensor
m c
cyclotron mass
M
mass, multiplication factor
M, M
magnetization
m e
effective electron mass
m h
effective hole mass
m j
magnetic quantum number
m l
longitudinal mass
m r
reduced mass
m t
transverse mass
n
electron concentration (in conduction band), ideality factor
n
normal vector
NðEÞ
number of states
n
Ã
complex index of refraction (¼ n r þ ij)
N A
acceptor concentration
N c
critical doping concentration
N C
conduction-band edge density of states
N D
donor concentration
n i
intrinsic electron concentration
n if
ideality factor due to image force effect
n r
index of refraction (real part)
n s
sheet electron density
N t
trap concentration
n tr
transparency electron concentration
n thr
threshold electron concentration
N V
valence-band edge density of states
p
pressure, free hole density
p, p
momentum
P
power
P, P
electric polarization
p cv
momentum matrix element
p i
intrinsic hole concentration
q
charge
xxxiv
Symbols