q, q
heat flow
Q
charge, quality factor, impurity-bound exciton localization energy
r
radius
r
spatial coordinate
R
resistance, radius, recombination rate
R k
responsivity
R
vector of direct lattice
r H
Hall factor
R H
Hall coefficient
s
spin
S
entropy, Seebeck coefficient, total spin, surface index, surface recombination velocity
S ij , S ijkl
stiffness coefficients
t
time
t ox
(gate) oxide thickness
T
temperature
u
displacement, cell-internal parameter
U
energy
u nk
Bloch function
v, v
velocity
V
volume, voltage, potential
VðkÞ
(standardized) sensitivity of human eye
V a
unit-cell volume
V A
Early voltage
V bi
built-in voltage
v g
group velocity
V G
gate voltage
V oc
open circuit voltage
V P
pinch-off voltage
v s
velocity of sound, drift-saturation velocity
V SD
source-drain voltage
v th
thermal velocity
w
depletion-layer width, width
w B
base width (bipolar transistor)
W m
(metal) work function
X
electronegativity
Y
Young's module, CIE brightness parameter
Z
partition sum, atomic order number
Symbols
xxxv