D
Ã
detectivity
D e ðEÞ
electron density of states
D h ðEÞ
hole density of states
D n
electron diffusion coefficient
D p
hole diffusion coefficient
e
elementary charge
e i
strain components (Voigt notation)
E
energy
E, E
electric field
E A
energy of acceptor level
E
b
A
acceptor ionization energy
E C
energy of conduction-band edge
E xc
exchange interaction energy
E D
energy of donor level, Dirac energy (in graphene)
E
b
D
donor ionization energy
E F
Fermi energy
E g
band gap
E i
intrinsic Fermi level
E m
maximum electric field
E P
energy parameter
E V
energy of valence-band edge
E vac
energy of vacuum level
E X
exciton energy
E
b
X
exciton binding energy
E XX
biexciton energy
f
oscillator strength
F
free energy
F, F
force
FðMÞ
excess noise factor
F B
Schottky barrier height
f e
Fermi–Dirac distribution function (for electrons)
f i
ionicity
f h
Fermi–Dirac distribution function for holes (¼ 1 À f e )
F n
electron quasi-Fermi energy
F p
hole quasi-Fermi energy
F P
Purcell factor
g
degeneracy, g-factor, gain
G
free enthalpy, generation rate
G, G
reciprocal lattice vector
g m
transconductance
G th
thermal generation rate
h
Planck constant
H
enthalpy, Hamiltonian
H, H
magnetic field
h
h/(2p)
i
imaginary number
I
current, light intensity
I D
drain current
I s
saturation current
I sc
short circuit current
Symbols
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