m
frequency, filling factor (QHE), winding number
P
Peltier coefficient
p ij
components of piezoresistivity tensor
q
mass density, charge density, resistivity
q ij
components of resistivity tensor
q P
polarization charge density (per volume)
r
standard deviation, conductivity, stress, effective mass ratio
Rn
grain boundary type
r ij
components of stress tensor, conductivity tensor
r n
electron capture cross section
r p
hole capture cross section
r P
polarization charge density (per area)
s
lifetime, time constant
s n
electron (minority carrier) lifetime
s nr
non-radiative lifetime
s p
hole (minority carrier) lifetime
s r
radiative lifetime
H D
Debye temperature
/
phase
U 0
photon flux
v
electron affinity, electric susceptibility
v ex
light extraction efficiency
v sc
electron affinity (of semiconductor)
vðrÞ
envelope wavefunction
w
angle
WðrÞ
wavefunction
x
angular frequency
x LO
longitudinal optical phonon frequency
x p
plasma frequency
x TO
transverse optical phonon frequency
X
interaction parameter
a
hydrostatic deformation potential, lattice constant
a
accelaration
A
atomic mass (A ¼ 12 for
12 C)
A
area, band-impurity recombination coefficient
A, A
vector potential
A
Ã
Richardson constant
a 0
(cubic) lattice constant
b
bowing parameter, deformation potential
b
Burger's vector
B
bimolecular recombination coefficient, bandwidth
B, B
magnetic induction field
c
velocity of light in vacuum, lattice constant (along c-axis)
C
capacitance, spring constant, Auger recombination coefficient
C n , C p
Auger recombination coefficient
C ij , C ijkl elastic constants
d
distance, shear deformation potential
d i
insulator thickness
D
density of states, diffusion coefficient
D, D
electric displacement field
xxxii
Symbols