Symbols
a
Madelung constant, disorder parameter, linewidth enhancement factor
aðxÞ
absorption coefficient
a m
mirror loss
a n
electron ionization coefficient
a p
hole ionization coefficient
a T
base transport factor
b
used as abbreviation for e=ðk B TÞ, spontaneous emission coefficient, two-photon
absorption coefficient
c
broadening parameter, Berry phase, Grüneisen parameter, emitter efficiency, tight-binding
nearest-neighbor coupling parameter
C
broadening parameter
c 1 , c 2 ,
c 3
Luttinger parameters
d ij
Kronecker symbol
D 0
spin-orbit splitting
ðxÞ
dielectric function
0
permittivity of vacuum
i
dielectric constant of insulator
r
relative dielectric function
s
dielectric function of semiconductor (¼ r 0 )
S
gain compression coefficient
ij
components of strain tensor
g
quantum efficiency
g d
differential quantum efficiency
g ext
external quantum efficiency
g int
internal quantum efficiency
g w
wall-plug efficiency
h
angle
H D
Debye temperature
H B
typical phonon energy parameter
j
imaginary part of index of refraction, heat conductivity
k
wavelength
k p
plasma wavelength
l
mobility
l 0
magnetic susceptibility of vacuum
l h
hole mobility
l H
Hall mobility
l n
electron mobility
xxxi