4.7 Intensity-Dependent Refractive Index
117
(a)
(b)
(c)
(d)
Fig. 4.24 Numerical demonstration of self-focusing for a silicon slab (a)–(b) and silicon-rodsbased zero-index metamaterial (c)–(d)
reduced the focusing distance from centimeter scale to micrometer scale making the
focusing achievable in integrated optics-based devices. Similarly, critical power has
also reduced from 8875 W in the case of Si to 6 W for ZIM, by the factor 1/1480,
which again makes it more suitable for integrated optics. In this way, by means
of zero-index media intense laser spots can be obtained in low-power microscopic
devices.
4.8 Nonlinear Response of Indium Tin Oxide Thin Film
Near Bulk Plasma Frequency
Indium tin oxide (ITO) is a transparent conducting oxide (TCO) synthesized in the
form of thin films deposited on a glass substrate by RF sputtering method. The target
used is usually consisting of 90% indium oxide (In 2 O 3 ) and 10% tin oxide (SnO 2 )
by weight. ITO has attracted tremendous interest because of its conductivity and
optical transparency, and being CMOS-compatible, it finds applications in numerous
117
(a)
(b)
(c)
(d)
Fig. 4.24 Numerical demonstration of self-focusing for a silicon slab (a)–(b) and silicon-rodsbased zero-index metamaterial (c)–(d)
reduced the focusing distance from centimeter scale to micrometer scale making the
focusing achievable in integrated optics-based devices. Similarly, critical power has
also reduced from 8875 W in the case of Si to 6 W for ZIM, by the factor 1/1480,
which again makes it more suitable for integrated optics. In this way, by means
of zero-index media intense laser spots can be obtained in low-power microscopic
devices.
4.8 Nonlinear Response of Indium Tin Oxide Thin Film
Near Bulk Plasma Frequency
Indium tin oxide (ITO) is a transparent conducting oxide (TCO) synthesized in the
form of thin films deposited on a glass substrate by RF sputtering method. The target
used is usually consisting of 90% indium oxide (In 2 O 3 ) and 10% tin oxide (SnO 2 )
by weight. ITO has attracted tremendous interest because of its conductivity and
optical transparency, and being CMOS-compatible, it finds applications in numerous