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the grain boundaries and the defects. Since the electro-active defects exist before
the
57 Fe deposition followed by the annealing at 200 and 800 °C, we consider such
defects have a strong influence on the diffusion process of Fe impurities in the mc-Si
matrix.
Fig. 9.59 Mössbauer Spectrum of 2 nm- 57 Fe-deposited mc-Si wafer after the annealing at 200 °C
for 1 h. Reprinted by permission from Springer Nature: Spring-er, Hyperfine Interactions, Mössbauer
spectroscopic micro-scope study on diffusion and segregation of Fe impurities in mc-Si wafer, Y.
Yoshida, T. Watanabe, Y. Ino, M. Koba-yashi, et al., © Springer International Publishing Switzerland 2020
Fig. 9.60 MSM electron images for 1 mm × 1 mm area, which correspond to the Fe spectral
components of substitutional Fe 0
Sub , and interstitials Fe 0
int and Fe
+2
int , are compared with the Raman
and PL mappings for the same area. Reprinted by permission from Springer Nature: Springer,
Hyperfine Interactions, Mössbauer spectroscopic microscope study on diffusion and segregation of
Fe impurities in mc-Si wafer, Y. Yoshida, T. Watanabe, Y. Ino, M. Kobayashi, et al., © Springer
International Publishing Switzerland 2020