284
12 Novel Nitride LED Technology
8. G.T. Wang, Q.M. Li, J.J. Wierer, D.D. Koleske, J.J. Figiel, Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs. Phys. Status Solidi A-Appl. Mater.
Sci. 211, 748–751 (2014)
9. W. Bergbauer, M. Strassburg et al., Continuous-flux MOVPE growth of position-controlled
N-face GaN nanorods and embedded InGaN quantum wells. Nanotechnology 21, 305201
(2010)
10. C.H. Lee, Y.J. Kim, Y.J. Hong, S.R. Jeon, S. Bae, B.H. Hong, G.C. Yi, Flexible inorganic
nanostructure light-emitting diodes fabricated on graphene films. Adv. Mater. 23, 4614–4619
(2011)
11. H.W. Lin, Y.J. Lu, H.Y. Chen, H.M. Lee, S. Gwo, InGaN/GaN nanorod array white lightemitting diode. Appl. Phys. Lett. 97, 073101 (2010)
12. H. Sekiguchi, K. Kishino, A. Kikuchi, Emission color control from blue to red with nanocolumn
diameter of InGaN/GaN nanocolumn arrays grown on same substrate. Appl. Phys. Lett. 96,
231104 (2010)
13. S. Albert, A. Bengoechea-Encabo, X. Kong, M.A. Sanchez-Garcia, E. Calleja, A. Trampert,
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range
in single ordered nanocolumns. Appl. Phys. Lett. 102, 181103 (2013)
14. Y.J. Hong, C.H. Lee, A. Yoon, M. Kim, H.K. Seong, H.J. Chung, C. Sone, Y.J. Park, G.C. Yi,
Visible-color-tunable light-emitting diodes. Adv. Mater. 23, 3284–3288 (2011)
15. K. Kumakura, K. Nakakoshi, J. Motohisa, T. Fukui, H. Hasegawa, Novel formation method of
quantum-dot structures by self-limited selective-area metalorganic vapor-phase epitaxy. Jpn.
J. Appl. Phys. Part 1-Reg. Pap. Short Notes Rev. Pap. 34, 4387–4389 (1995)
16. J. Tulkki, A. Heinamaki, Confinement effect in a quantum-well dot induced by an InP stressor.
Phys. Rev. B. 52, 8239–8243 (1995)
17. S. Raymond, X. Guo, J.L. Merz, S. Fafard, Excited-state radiative lifetimes in self-assembled
quantum dots obtained from state-filling spectroscopy. Phys. Rev. B. 59, 7624–7631 (1999)
18. R. Heitz, M. Grundmann et al., Multiphonon-relaxation processes in self-organized InAs/GaAs
quantum dots. Appl. Phys. Lett. 68, 361–363 (1996)
19. Y.R. Wu, Y.Y. Lin, H.H. Huang, J. Singh, Electronic and optical properties of InGaN quantum
dot based light emitters for solid state lighting. J. Appl. Phys. 105, 013117 (2009)
20. S. Schulz, E.P. O’reilly, Theory of reduced built-in polarization field in nitride-based quantum
dots. Phys. Rev. B. 82, 033411 (2010)
21. I.K. Park, J.Y. Kim, M.K. Kwon, C.Y. Cho, J.H. Lim, S.J. Park, Phosphor-free white lightemitting diode with laterally distributed multiple quantum wells. Appl. Phys. Lett. 92, 091110
(2008)
22. M. Zhang, P. Bhattacharya, W. Guo, InGaN/GaN self-organized quantum dot green light
emitting diodes with reduced efficiency droop. Appl. Phys. Lett. 97, 011103 (2010)
23. W.B. Lv, L. Wang, J.X. Wang, Z.B. Hao, Y. Luo, InGaN/GaN multilayer quantum dots yellowgreen light-emitting diode with optimized GaN barriers. Nanoscale Res. Lett. 7, 617 (2012)
24. J. Ma, X.L. Ji et al., Anomalous temperature dependence of photoluminescence in selfassembled InGaN quantum dots. Appl. Phys. Lett. 101, 131101 (2012)
25. S.J. Chua, C.B. Soh, W. Liu, J.H. Teng, S.S. Ang, S.L. Teo, Quantum dots excited InGaN/GaN
phosphor-free white LEDs. Phys. Status Solidi C Curr. Top. Solid State Phys. 5, 2189–2191
(2008)
26. H.S. Chen, C.K. Hsu, H.Y. Hong, InGaN-CdSe-ZnSe quantum dots white LEDs. IEEE
Photonics Technol. Lett. 18, 193–195 (2006)
27. K. Okamoto, Y. Kawakami, High-efficiency InGaN/GaN light emitters based on nanophotonics
and plasmonics. IEEE J. Sel. Top. Quantum Electron. 15, 1199–1209 (2009)
28. K. Okamoto, I. Niki, A. Shvartser et al., Surface-plasmon-enhanced light emitters based on
InGaN quantum wells. Nat. Mater. 3, 601–605 (2004)
29. K. Okamoto, I. Niki, A. Scherer, Surface plasmon enhanced spontaneous emission rate of
InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy. Appl.
Phys. Lett. 87, 071102 (2005)
12 Novel Nitride LED Technology
8. G.T. Wang, Q.M. Li, J.J. Wierer, D.D. Koleske, J.J. Figiel, Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs. Phys. Status Solidi A-Appl. Mater.
Sci. 211, 748–751 (2014)
9. W. Bergbauer, M. Strassburg et al., Continuous-flux MOVPE growth of position-controlled
N-face GaN nanorods and embedded InGaN quantum wells. Nanotechnology 21, 305201
(2010)
10. C.H. Lee, Y.J. Kim, Y.J. Hong, S.R. Jeon, S. Bae, B.H. Hong, G.C. Yi, Flexible inorganic
nanostructure light-emitting diodes fabricated on graphene films. Adv. Mater. 23, 4614–4619
(2011)
11. H.W. Lin, Y.J. Lu, H.Y. Chen, H.M. Lee, S. Gwo, InGaN/GaN nanorod array white lightemitting diode. Appl. Phys. Lett. 97, 073101 (2010)
12. H. Sekiguchi, K. Kishino, A. Kikuchi, Emission color control from blue to red with nanocolumn
diameter of InGaN/GaN nanocolumn arrays grown on same substrate. Appl. Phys. Lett. 96,
231104 (2010)
13. S. Albert, A. Bengoechea-Encabo, X. Kong, M.A. Sanchez-Garcia, E. Calleja, A. Trampert,
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range
in single ordered nanocolumns. Appl. Phys. Lett. 102, 181103 (2013)
14. Y.J. Hong, C.H. Lee, A. Yoon, M. Kim, H.K. Seong, H.J. Chung, C. Sone, Y.J. Park, G.C. Yi,
Visible-color-tunable light-emitting diodes. Adv. Mater. 23, 3284–3288 (2011)
15. K. Kumakura, K. Nakakoshi, J. Motohisa, T. Fukui, H. Hasegawa, Novel formation method of
quantum-dot structures by self-limited selective-area metalorganic vapor-phase epitaxy. Jpn.
J. Appl. Phys. Part 1-Reg. Pap. Short Notes Rev. Pap. 34, 4387–4389 (1995)
16. J. Tulkki, A. Heinamaki, Confinement effect in a quantum-well dot induced by an InP stressor.
Phys. Rev. B. 52, 8239–8243 (1995)
17. S. Raymond, X. Guo, J.L. Merz, S. Fafard, Excited-state radiative lifetimes in self-assembled
quantum dots obtained from state-filling spectroscopy. Phys. Rev. B. 59, 7624–7631 (1999)
18. R. Heitz, M. Grundmann et al., Multiphonon-relaxation processes in self-organized InAs/GaAs
quantum dots. Appl. Phys. Lett. 68, 361–363 (1996)
19. Y.R. Wu, Y.Y. Lin, H.H. Huang, J. Singh, Electronic and optical properties of InGaN quantum
dot based light emitters for solid state lighting. J. Appl. Phys. 105, 013117 (2009)
20. S. Schulz, E.P. O’reilly, Theory of reduced built-in polarization field in nitride-based quantum
dots. Phys. Rev. B. 82, 033411 (2010)
21. I.K. Park, J.Y. Kim, M.K. Kwon, C.Y. Cho, J.H. Lim, S.J. Park, Phosphor-free white lightemitting diode with laterally distributed multiple quantum wells. Appl. Phys. Lett. 92, 091110
(2008)
22. M. Zhang, P. Bhattacharya, W. Guo, InGaN/GaN self-organized quantum dot green light
emitting diodes with reduced efficiency droop. Appl. Phys. Lett. 97, 011103 (2010)
23. W.B. Lv, L. Wang, J.X. Wang, Z.B. Hao, Y. Luo, InGaN/GaN multilayer quantum dots yellowgreen light-emitting diode with optimized GaN barriers. Nanoscale Res. Lett. 7, 617 (2012)
24. J. Ma, X.L. Ji et al., Anomalous temperature dependence of photoluminescence in selfassembled InGaN quantum dots. Appl. Phys. Lett. 101, 131101 (2012)
25. S.J. Chua, C.B. Soh, W. Liu, J.H. Teng, S.S. Ang, S.L. Teo, Quantum dots excited InGaN/GaN
phosphor-free white LEDs. Phys. Status Solidi C Curr. Top. Solid State Phys. 5, 2189–2191
(2008)
26. H.S. Chen, C.K. Hsu, H.Y. Hong, InGaN-CdSe-ZnSe quantum dots white LEDs. IEEE
Photonics Technol. Lett. 18, 193–195 (2006)
27. K. Okamoto, Y. Kawakami, High-efficiency InGaN/GaN light emitters based on nanophotonics
and plasmonics. IEEE J. Sel. Top. Quantum Electron. 15, 1199–1209 (2009)
28. K. Okamoto, I. Niki, A. Shvartser et al., Surface-plasmon-enhanced light emitters based on
InGaN quantum wells. Nat. Mater. 3, 601–605 (2004)
29. K. Okamoto, I. Niki, A. Scherer, Surface plasmon enhanced spontaneous emission rate of
InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy. Appl.
Phys. Lett. 87, 071102 (2005)