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wire grid polarizer. Opt. Express 18(14), 14547–14552 (2010)
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diodes. Appl. Phys. Lett. 86, 091107 (2005)
49. C. Jia, T. Yu, S. Mu et al., Polarization of edge emission from III-nitride light emitting diodes
of emission wavelength from 395 to 455 nm. Appl. Phys. Lett. 90, 211112 (2007)
50. K. Shen, C. Chen, C. Huang et al., Polarization dependent coupling of surface plasmon on
a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure. Appl. Phys.
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285
30. P.P. Pompa, L. Martiradonna, A.D. Torre et al., Metal-enhanced fluorescence of colloidal
nanocrystals with nanoscale control. Nat. Nanotechnol. 1, 126–130 (2006)
31. D.M. Yeh, C.F. Huang, C.Y. Chen, Y.C. Lu, C.C. Yang, Localized surface plasmon-induced
emission enhancement of a green light-emitting diode. Nanotechnology 19, 345201 (2008)
32. C.Y. Cho, M.K. Kwon, S.J. Lee et al., Surface plasmon-enhanced light-emitting diodes using
silver nanoparticles embedded in p-GaN. Nanotechnology 21, 205201 (2010)
33. C.Y. Cho, K.S. Kim, S.J. Le et al., Surface plasmon-enhanced light-emitting diodes with silver
nanoparticles and SiO 2 nano-disks embedded in p- GaN. Appl. Phys. Lett. 99, 041107 (2011)
34. C.H. Lu, C.C. Lan, Y.L. Lai et al., Enhancement of green emission from InGaN/GaN multiple
quantum wells via coupling to surface plasmons in a two-dimensional silver array. Adv. Funct.
Mater. 21, 4719–4723 (2011)
35. H.S. Chen, C.F. Chen, Y. Kuo et al., Surface plasmon coupled light-emitting diode with metal
protrusions into p-GaN. Appl. Phys. Lett. 102, 41108 (2013)
36. Z.G. Yu, L.X. Zhao, X.C. Wei et al., Surface plasmon-enhanced nanoporous GaN based green
light-emitting diodes with Al 2 O 3 passivation layer. Opt. Express 22, A1596–A1603 (2014)
37. M.F. Schubert, A. Noemaun, S. Chhajed et al., Encapsulation shape with non-rotational
symmetry designed for extraction of polarized light from unpolarized sources. Opt. Express
15, 10452–10457 (2007)
38. M.F. Schubert, S. Chhajed, J.K. Kim et al., Polarization of light emission by 460 nm GaInN/GaN
light-emitting diodes grown on (0001) oriented sapphire substrates. Appl. Phys. Lett. 91,
051117 (2007)
39. M.F. Schubert, S. Chhajed, J.K. Kim et al., Linearly polarized emission from GaInN lightemitting diodes with polarization-enhancing reflector. Opt. Express 15, 11213–11218 (2007)
40. O. Sepsi, I. Szanda, P. Koppa, Investigation of polarized light emitting diodes with integrated
wire grid polarizer. Opt. Express 18(14), 14547–14552 (2010)
41. N. Gardner, J. Kim, J. Wierer et al., Polarization anisotropy in the electroluminescence of mplane InGaN-GaN multiple-quantum-well light-emitting diodes. Appl. Phys. Lett. 86, 111101
(2005)
42. S. Brinkley, Y. Lin, A. Chakraborty et al., Polarized spontaneous emission from blue-green
m-plane GaN-based light emitting diodes. Appl. Phys. Lett. 98, 011110 (2011)
43. M. Kubota, K. Kuniyoshi, T. Taketoshi et al., Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes. Appl.
Phys. Lett. 92, 011920 (2008)
44. E. Matioli, S. Brinkley, K.M. Kelchner et al., Polarized light extraction in m-plane GaN lightemitting diodes by embedded photonic-crystals. Appl. Phys. Lett. 98, 251112 (2011)
45. E. Matioli, S. Brinkley, K.M. Kelchner, Y.L. Hu, S. Nakamura, S. DenBaars, J. Speck, C.
Weisbuch, Light Sci. Appl. 1, e22 (2012)
46. H. Masui, H. Yamada, K. Iso et al., Optical polarization characteristics of m-oriented
InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well
structure. J. Phys. D-Appl. Phys. 41, 225104 (2008)
47. A. Yamaguchi, Anisotropic optical matrix elements in strained GaN quantum wells on
semipolar and nonpolar substrates. Jpn. J. Appl. Phys. Part 2-Lett. Express Lett. 46, L789–L791
(2007)
48. J. Shakya, K. Knabe, K. Kim et al., Polarization of III-nitride blue and ultraviolet light-emitting
diodes. Appl. Phys. Lett. 86, 091107 (2005)
49. C. Jia, T. Yu, S. Mu et al., Polarization of edge emission from III-nitride light emitting diodes
of emission wavelength from 395 to 455 nm. Appl. Phys. Lett. 90, 211112 (2007)
50. K. Shen, C. Chen, C. Huang et al., Polarization dependent coupling of surface plasmon on
a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure. Appl. Phys.
Lett. 92, 013108 (2008)
51. K. Shen, C. Liao, Z. Yu et al., Effects of the intermediate SiO 2 layer on polarized output of a
light-emitting diode with surface plasmon coupling. J. Appl. Phys. 108, 113101 (2010)
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